波长可调谐氮化硅外腔半导体激光器  

Wavelength⁃Tunable Silicon Nitride External⁃Cavity Diode Laser

作　　者：陈怡茗 丛庆宇 贾连希 邱阳 赵兴岩 郑少南 董渊 钟其泽 胡挺 Chen Yiming;Cong Qingyu;Jia Lianxi;Qiu Yang;Zhao Xingyan;Zheng Shaonan;Dong Yuan;Zhong Qize;Hu Ting(School of Microelectronics,Shanghai University,Shanghai 201800,China)

机构地区：[1]上海大学微电子学院,上海201800摘要波长可调谐外腔半导体激光器在片上全光通信和片上光子器件互连集成

出　　处：《中国激光》2024年第13期58-65,共8页Chinese Journal of Lasers

基　　金：国家自然科学基金(U23A20356,62205193,62204149)。

摘　　要：波长可调谐外腔半导体激光器在片上全光通信和片上光子器件互连集成中发挥着至关重要的作用。采用两个半径不同的微环谐振器和两种不同结构的马赫-曾德尔干涉仪,设计了一种基于厚度为700 nm的氮化硅波导的外腔反射镜,并采用大马士革工艺制作了外腔反射镜。结合Ⅲ-Ⅴ族反射型半导体光放大器和可调谐氮化硅外腔反射镜,通过对移相器热电极电压、可调耦合器热电极电压和微环谐振器热电极电压等参数进行调节,获得了最大调谐范围为55 nm、边模抑制比超过40 dB的外腔半导体激光器。Objective Semiconductor lasers are pivotal light sources in optical communication systems. Owing to their compact size and lightweight, they are beneficial for seamless integration with other devices for monolithic optoelectronic solutions. They play an important role in various fields, including fully integrated optical communication systems, optical sensing, light detection and ranging(LiDAR), and ultra-wideband wavelength division multiplexing(WDM) systems. However, silicon is an indirect bandgap material with a low luminescence efficiency, making it unsuitable as an efficient gain medium for semiconductor lasers. A practical solution involves combining Ⅲ-Ⅴ materials, known for their direct bandgap, with Si, which exhibits low propagation loss. Two-photon and free-carrier absorption are typically negligible because silicon nitride has a wider bandgap than silicon. Therefore, silicon nitride has been gaining significance for the formation of external-cavity structures in semiconductor lasers. Currently, typical external-cavity structures utilize micro-ring resonators or Sagnac loop reflectors as the reflective ends. However, the dispersion effect of the silicon nitride waveguide introduces variability in reflectivity with the operating wavelength, resulting in uncontrollable reflectivity and limiting improvements in laser performance. In this study, we report an external-cavity reflection structure designed to control reflectivity, enabling laser mode selection and the optimization of output characteristics.Methods Figure 1 illustrates the schematic structure of a tunable silicon nitride diode external-cavity laser. Within this structure,the reflective semiconductor optical amplifier(RSOA) and external-cavity reflector collectively form a Fabry–Perot resonant cavity.Light resonates within this cavity and is amplified within the gain medium. If the resulting gain is sufficient to overcome the losses of the resonant optical mode within the cavity, a relatively coherent light is emitted. A spot-size converte

关 键 词：激光器 外腔半导体激光器 微环谐振器 马赫-曾德尔干涉仪 大马士革工艺 

分 类 号：TN2[电子电信—物理电子学] TN3