基于倒装键合的高速高功率平衡光电探测器  

High-Speed, High-Power Balanced Photodiodes Based on Flip-Chip Bonding

作　　者：王紫赟 谢小军 魏超 潘炜[1] 闫连山[1] Wang Ziyun;Xie Xiaojun;Wei Chao;Pan Wei;Yan Lianshan(School of Information Science and Technology,Southwest Jiaotong University,Chengdu 611756,Sichuan,China)

机构地区：[1]西南交通大学信息科学与技术学院,四川成都611756

出　　处：《光学学报》2024年第13期18-25,共8页Acta Optica Sinica

基　　金：国家重点研发计划项目(2022YFB2803800);国家自然科学基金区域创新发展联合基金重点支持项目(U23A20376)。

摘　　要：提出并制备一种高速高功率改进型单行载流子平衡光电探测器,通过引入P型掺杂牺牲层,调节漂移层电场强度,赋能光生电子近弹道输运特性,进而减少载流子的渡越时间,有效扩展器件的带宽,并在高功率条件下有效抑制器件的功率饱和现象。同时,将光电探测器芯片倒装键合在高导热系数金刚石基片上,降低光电探测器芯片核心温度,进一步提高器件射频输出功率。在-3 V偏压下器件暗电流小于200 nA。有源区直径为4、6、8μm的器件分别具有52、42、40 GHz的3 dB带宽响应。有源区直径为6μm和8μm的器件分别在50 GHz、47 GHz处达到8.0 dBm和14.0 dBm的射频输出功率。Objective Microwave photonics(MWP) seamlessly integrates microwave technology with photonics, harnessing the strengths of both to enable long-distance transmission and efficient processing of microwave signals. By encoding microwave signals onto optical signals and utilizing optical fibers for transmission, MWP offers significant benefits such as large bandwidth, low loss, and strong anti-interference capabilities. This technology finds wide application in various fields, including long-distance communication, radar array systems, and radio frequency(RF) signal processing. Balanced photodiodes(BPDs) are essential components in analog photonics transmission links, effectively mitigating relative intensity noise from laser sources and amplified spontaneous emission noise from erbium-doped fiber amplifiers(EDFAs).Therefore, the development of high-power and high-speed balanced photodiodes is crucial for achieving high link gain, low noise, and a large spurious-free dynamic range in microwave photonics transmission links. Traditional PIN photodetectors suffer from limitations in bandwidth and output power due to the slow drift velocity of holes and serious space-charge effects. Uni-traveling carrier photodetectors(UTC-PDs) have been demonstrated to overcome these limitations by separating the absorption and drift regions. In UTC-PDs, light is absorbed in the heavily doped P-type absorption layer,generating electron-hole pairs. The photo-generated holes are then collected by a metal contact via dielectric relaxation,allowing only electrons with high mobility to drift to the collection layer. In this study, a high-speed and high-power modified uni-traveling carrier balanced photodiode is demonstrated through flip-chip bonding on a diamond submount.Methods The epitaxial layer structure of the balanced photodiode is optimized. A 50 nm thick P-type doping charge layer is introduced to regulate the electric field in the drift layer, enabling electron overshoot. Additionally, a stepped doping undepleted absorption layer, wi

关 键 词：高速光电探测器 光电探测器 平衡光电探测器 倒装键合 微波光子学 

分 类 号：TN215[电子电信—物理电子学]