InGaAs阱簇复合纳米结构的能带填充规律  

Band Filling Law of InGaAs Well-Cluster Composite Nanostructures

作　　者：王茹 葛兴 盛泓瑜 杨舒婷 王新宇 许世航 曾蕙明 于庆南 Wang Ru;Ge Xing;Sheng Hongyu;Yang Shuting;Wang Xinyu;Xu Shihang;Zeng Huiming;Yu Qingnan(School of Electronic and Information Engineering,Wuxi University,Wuxi 214105,Jiangsu,China)

机构地区：[1]无锡学院电子信息工程学院,江苏无锡214105

出　　处：《光学学报》2024年第13期199-205,共7页Acta Optica Sinica

基　　金：“锡山英才计划”高校创新领军人才项目(2023xsyc002);江苏省高等学校基础科学(自然科学)研究项目(22KJB140016);江苏省双创博士项目(JSSCBS20210870,JSSCBS20210868);南京信息工程大学滨江学院人才启动经费(550221009,550221036);无锡学院大学生创新创业训练计划项目(202313982009Z)。

摘　　要：为了探究InGaAs阱簇复合(WCC)纳米结构的能带填充规律和波长调谐能力,通过收集实验样品两侧辐射的光致发光(PL)光谱,结合材料增益和电子-空穴的准费米能级,分析WCC结构在不同非平衡载流子注入水平(9.0×10^(17)~9.6×10^(17)cm^(-3))下电子和空穴的能带填充规律。与传统InGaAs/GaAs量子阱结构相比,WCC纳米结构特有的非对称阶梯能带特征使其具有更高的能带填充水平以及更宽的有效辐射能级,可显著增大激光器的光谱带宽以及提高波长调谐能力。InGaAs WCC纳米结构具有超宽的辐射光谱以及较强的波长调谐能力,对研制新一代宽可调谐激光器具有重要的参考价值。Objective The characteristics of limited carrier-filling levels and radiation bandwidths in traditional quantum well structures result in some drawbacks in the applications of tunable lasers.The band-filling effect of electrons and holes is an important physical mechanism to reveal the luminescence performance of semiconductor lasers, which is significant for evaluating the wavelength tuning ability. The band-filling level of non-equilibrium carriers is closely related to the energy band structure and material properties. To improve the wavelength tuning ability of semiconductor lasers, it is urgent to explore a new type of quantum confinement structure.Recently, the indium-rich cluster(IRC) effect in InGaAs/GaAs materials is investigated, which leads to a well-cluster composite(WCC) nanostructure containing a large number of active regions with different band gaps. The migration of indium atoms in WCC nanostructures produces a special asymmetric band feature and very interesting emission characteristics. The quasi-Fermi energy level and carried-injected band-filling effect are greatly improved to bring about ultra-wide radiative energy levels and spectral bandwidths. However, the research on band-filling patterns of semiconductor lasers mainly focuses on traditional quantum well structures rather than WCC structures. To further reveal the improved wavelength tuning ability, we investigate the carrier-filling level in the novel WCC structure, which is of significance for the development of new types of tunable lasers.Methods The approach replaces conventional quantum wells or quantum dots with an InGaAs-based WCC quantumconfined structure as a gain medium. Firstly, the epitaxial structure of the InGaAs-based WCC sample is grown on the GaAs(001) substrate using the metal organic chemical vapor deposition(MOCVD) technique, where the In_(0.17)Ga_(0.83)As/GaAs/GaAs_(0.92)P_(0.08 )material system is employed as the active region. To generate the necessary lattice mismatch and strain accumulation for the migration of i

关 键 词：材料 阱簇复合纳米结构 能带填充水平 准费米能级 波长调谐能力 

分 类 号：O432[机械工程—光学工程]