Ultra-wideband Waveguide-coupled Photodiodes Heterogeneously Integrated on a Thin-film Lithium Niobate Platform  

作　　者：Chao Wei Youren Yu Ziyun Wang Lin Jiang Zhongming Zeng Jia Ye Xihua Zou Wei Pan Xiaojun Xie Lianshan Yan 

机构地区：[1]Key Laboratory of Photonic-Electric Integration and Communication-Sensing Convergence,School of Information Science and Technology,Southwest Jiaotong University,Chengdu,611756,China [2]School of Nano Technology and Nano Bionics,University of Science and Technology of China,Hefei,230026,China

出　　处：《Light(Advanced Manufacturing)》2023年第3期263-271,共9页光（先进制造）（英文）

基　　金：supported by the National Key Research and Development Program(2022YFB2803800);Fundamental Research Funds for the Central Universities(2682022CX025).

摘　　要：With the advantages of large electro-optical coefficient,wide transparency window,and strong optical confinement,thin-film lithium niobate(TFLN)technique has enabled the development of various high-performance optoelectronics devices,ranging from the ultra-wideband electro-optic modulators to the high-efficient quantum sources.However,the TFLN platform does not natively promise lasers and photodiodes.This study presents an InP/InGaAs modified uni-traveling carrier(MUTC)photodiodes heterogeneously integrated on the TFLN platform with a record-high 3-dB bandwidth of 110 GHz and a responsivity of 0.4 A/W at a 1,550-nm wavelength.It is implemented in a wafer-level TFLN-InP heterogeneous integration platform and is suitable for the large-scale,multi-function,and high-performance TFLN photonic integrated circuits.

关 键 词：Photodiodes Thin-film lithium niobate Integrated photonics Ultra-wideband electro-optic modulators 

分 类 号：TN312.8[电子电信—物理电子学]