阴影栅膜层对阴极发射性能的影响  

Effect of Shadow Grid Membrane on Cathode Emission Performance

作　　者：王卉[1] 张珂[1] 杨鹏云 WANG Hui;ZHANG Ke;YANG Peng-yun(Beijing Vacuum Electronics Research Institute,Beijing 100015,China)

机构地区：[1]北京真空电子技术研究所,北京100015

出　　处：《真空电子技术》2024年第4期47-53,共7页Vacuum Electronics

摘　　要：研究了栅控行波管中阴影栅抑制发射膜层对阴极电子发射性能的影响。阴影栅和阴极的表面结构及成分分析结果表明,温度越高,时间越长,阴极和阴影栅表面微观结构改变越大,阴极表面活性钡含量越少。阴极表面覆抑制薄膜研究结果表明,铪和钽薄膜对阴极发射抑制作用相当,锆膜的抑制效果最佳。重点研究了锆薄膜不同覆盖面积的阴极发射性能及其抑制发射的机理。The effect of shadow grid membrane on cathode electron emission performance in grid-controlled traveling wave tube is studied.The analysis of the surface structure and composition of the shadow grid and cathode shows that higher temperature and longer time result in greater microstructure change in cathode and shadow grid surface,and lower active barium content on the cathode surface.The research results of cathode surface suppression film show that hafnium film and tantalum film have comparable inhibitory effects on cathodic emission,and zirconium film has the best inhibitory effect.The emission performance of cathodes with different zirconium thin film coverage areas and the emission suppression mechanism are studied in detail.

关 键 词：栅控行波管 阴极热丝组件 抑制发射金属膜层 

分 类 号：O462[理学—电子物理学]