AlN陶瓷基片的流延法制备及性能研究  

Preparation and Characterization of Aluminum NitrideCeramic Substrates by Tape-casting Method

作　　者：谭会会 于志强[1] 李海青 臧向荣 闫明 赵云鹏 TAN Hui-hui;YU Zhi-qiang;LI Hai-qing;ZANG Xiang-rong;YAN Ming;ZHAO Yun-peng(Beijing Vacuum Electronics Research Institute,Beijing 100015,China)

机构地区：[1]中国电子科技集团公司第十二研究所,北京100015

出　　处：《真空电子技术》2024年第4期68-71,75,共5页Vacuum Electronics

摘　　要：采用流延法制备AlN陶瓷基片,使用无水乙醇为溶剂,避免了酮类、苯类混合溶剂对人体和环境的危害;同时以磷酸三乙酯为分散剂、以聚乙烯醇缩丁醛为粘结剂、以邻苯二甲酸丁卞酯为塑化剂,并在氮氢混合气氛下高温烧结。对比研究了进口AlN粉体和国产AlN粉体在相同条件下制备的陶瓷基片的性能,结果表明:采用两种粉体制备成的陶瓷基片性能指标基本相当;采用进口粉体制备的基片最佳烧结温度在1830℃,密度达到3.327 g/cm^(3),热导率达到179.0 W/m·K,三点抗弯强度达到374.9 MPa。采用国产AlN粉制备的基片,其最佳烧结温度在1820~1825℃,密度达到3.320 g/cm^(3),热导率达到174.8 W/m·K,三点抗弯强度达到423.1 MPa。Aluminum nitride ceramic substrates are prepared by tape-casting method.In order to avoid the harm of mixed solvents of ketones and benzene to human health and environment,anhydrous ethanol is used as solvent.Phosphate is used as dispersant,polyvinyl butyral is used as binder,butyl phthalate is used as plasticizer,and the aluminum nitride substrate is sintered at high temperature in a mixed atmosphere of nitrogen and hydrogen.The properties of ceramic substrates prepared by imported AlN powder and domestic AlN powder under the same conditions are compared.The results indicate that the performance of the two different AlN substrates are basically equivalent.The optimal sintering temperature for AlN substrates prepared with imported powder is 1830℃,the density of the substartes is 3.327 g/cm^(3),the thermal conductivity is 179.0 W/m·K,and the three-point bending strength is 374.9 MPa.The AlN substrate prepared with domestic powder has an optimal sintering temperature of 1820~1825℃,the density of it is 3.320 g/cm^(3),the thermal conductivity is 174.8 W/m·K,and the three-point bending strength is 423.1 MPa.

关 键 词：AlN基片 流延 气氛烧结 性能表征 

分 类 号：TQ174[化学工程—陶瓷工业]