国产氮化硅AMB覆铜板可靠性研究  

Reliability Study of the Domestic Silicon NitrideActive Metal Brazing Copper Ceramic Substrate

作　　者：周泽安 张振文 耿春磊[1,2] 许海仙 朱家旭[1] 黄胜猛 张浩[1,2] ZHOU Ze-an;ZHANG Zhen-wen;GENG Chun-lei;XU Hai-xian;ZHU Jia-xu;HUANG Sheng-meng;ZHANG Hao(Hefei Shengda Electronic Technology Industry Co.Ltd,Hefei AnHui 230088,China;The 43rd Research Institute of China Electronics Technology Group Corporation,Hefei Anhui 230088,China)

机构地区：[1]合肥圣达电子科技实业有限公司,安徽合肥230088 [2]中国电子科技集团公司第43研究所,安徽合肥230088

出　　处：《真空电子技术》2024年第4期81-85,共5页Vacuum Electronics

摘　　要：氮化硅陶瓷覆铜板具有优异的高可靠性,使其成为新能源汽车、高铁等领域功率模块的必选散热基板材料之一。采用活性金属化焊接工艺制备国产氮化硅AMB覆铜板,剥离强度≥14 N/mm,且整版剥离强度性能均匀;在350~25℃高低温冲击120次,并未出现显著分层,剥离强度并未出现显著降低;国产氮化硅AMB覆铜板端子拉拔测试断裂处呈现S弯,铜层并未出现拉起现象。国产氮化硅AMB覆铜板与进口产品相当,可满足功率模块使用要求。The excellent reliability of silicon nitride-copper ceramic substrate makes it one of the essential heat dissipation substrate materials for power modules in fields such as new energy vehicles and high-speed railways.The active metal brazing process is used to manufacture domestic silicon nitride-copper ceramic substrate.The peel strength of the substrate is≥14 N/mm,and the overall peel strength performance is uniform.After being subjected to high and low temperature shocks at 300℃-25℃for 120 cycles,no significant delamination is observed,and the peel strength does not show a significant decrease.The domestic silicon nitride active metal brazing copper ceramic substrate shows an S-shaped bend at the fracture point during the pull-out test,and the copper layer doesn’t show any copper layer delamination.The domestic silicon nitride active metal brazing copper ceramic substrate is comparable to imported products and can meet the requirements of power module usage.

关 键 词：氮化硅陶瓷 活性金属化焊接 剥离强度 温度循环 

分 类 号：TN12[电子电信—物理电子学]