超宽带高效率大功率放大器技术研究  

Research on ultra-wideband high power amplifier technology

作　　者：李东林 杨飞[1] LI Donglin;YANG Fei(China Academy of Space Technology(Xi′an),Xi′an 71000,China)

机构地区：[1]中国空间技术研究院西安分院,西安710000

出　　处：《中国空间科学技术（中英文）》2024年第4期153-160,共8页Chinese Space Science and Technology

基　　金：陕西省创新能力支撑计划(S2020-ZC-XXXM-0071);中国航天科技集团有限公司青年拔尖人才支持计划。

摘　　要：宽带功率放大器是宽带通信、电子对抗以及雷达系统中核心、通用和高附加值部件。随着通信系统需求的不断提升,对于带宽更宽、效率更高、功率更大的功率放大器的需求已经迫在眉睫。基于氮化镓(gallium nitride,GaN)高电子迁移率晶体管(high electron mobility transistor,HEMT)设计了一款工作频率在0.46~3.9 GHz的超宽带功率放大器。首先对输入匹配进行优化设计,实现全频带内绝对稳定以及高增益放大;其次通过对目标频带内不同频点进行多次负载牵引设计,提取出高功率、高效率输出匹配阻抗空间,并应用4段切比雪夫阻抗变换器作为输出匹配拓扑,实现宽频带内的高效率和高功率输出。测试结果表明:在0.46~3.9 GHz的工作频带内,输出功率Pout>13.8 dBm,最高输出功率为24.1 W;全频带漏极效率(drain efficiency,DE)DE>50.1%,最高漏极效率为67.2%。仿真与实测结果吻合,为设计目前所需超宽带功率放大器提供了思路。Ultra-wideband power amplifier is the core,versatile and high value-added components in wideband communications,electronic countermeasures and radar systems.As the demand for communication systems continues to increase,the need for power amplifiers with wider bandwidth,higher efficiency,and more power is imminent.An ultra-wideband power amplifier is designed based on GaN(gallium nitride)high electron mobility transistor(HEMT)with operating frequency from 0.46 GHz to 3.9 GHz.Firstly,the input matching is optimized to achieve absolute stability and high gain in the full frequency band.Secondly,the high power and high efficiency output matching impedance space is extracted by load-pull design at different frequency points within the target frequency band,and then a four-stage Chebyshev impedance converter is applied as the output matching topology to achieve high efficiency and high output power in the wide frequency band.The test results show that within the operating band from 0.46 GHz to 3.9 GHz,the overall output power(P out)is greater than 13.8 W with the maximum output power of 24.1 W;the full-band drain efficiency is greater than 50.1%with the maximum value of 67.2%at 1.5 GHz.The measured results are in good agreement with the simulation results,and the design idea is intuitive and clear,which provides a direction for designing the currently required ultra-wideband power amplifier.

关 键 词：超宽带 功率放大器 GaN HEMT 切比雪夫变换器 负载牵引 

分 类 号：TN722[电子电信—电路与系统]