Three-dimensional/one-dimensional perovskite heterostructures for stable tri-state synaptic memristors  

三维/一维钙钛矿异质结应用于稳定的三态突触忆阻器

作　　者：Jiaqi Gong Shilei Ji Jintian Li Hudie Wei Weiwei Mao Jing Hu Wen Huang Xuemin He Xing’ao Li Liang Chu 龚佳琦;季石磊;李锦添;魏蝴蝶;毛巍威;胡静;黄稳;何学敏;李兴鳌;楚亮(School of Science&School of Electronic and Optical Engineering,Nanjing University of Posts and Telecommunications,Nanjing,210023,China;Institute of Carbon Neutrality and New Energy&School of Electronics and Information,Hangzhou Dianzi University,Hangzhou,310018,China)

机构地区：[1]School of Science&School of Electronic and Optical Engineering,Nanjing University of Posts and Telecommunications,Nanjing,210023,China [2]Institute of Carbon Neutrality and New Energy&School of Electronics and Information,Hangzhou Dianzi University,Hangzhou,310018,China

出　　处：《Science China Materials》2024年第9期2848-2855,共8页中国科学（材料科学）（英文版）

基　　金：funded by the National Natural Science Foundation of China(52172205)。

摘　　要：Memristors have great potential in neural network computation.Perovskite memristors exhibit excellent resistive-switching(RS)properties between high resistance state(HRS)and low resistance state(LRS)state under applied voltage due to the extraordinary ion migration and superior charge transfer.However,the stability issue of traditional three-dimensional(3D)perovskites is still challenging.Here,one-dimensional(1D)(CH_(3))_(3)SPbI_(3)perovskite passivation layer was in-situ formed on 3D perovskite film,which was further applied in stable synaptic memristor.The memristor was provided with three resistance states due to the heterojunction electric field coupled with ion migration.The on/off ratio of memristors was obviously improved from 10 to over 60.The RS characteristics of 3D/1D perovskite memristor remained unchanged after 10^(3)s read and 300 switching cycles.The 3D/1D perovskite memristor effectively exhibited versatile synaptic plasticity behaviors including long-term potentiation,long-term depression and paired-pulse facilitation by controlling the input voltages.Notably,the novel device provides a new candidate for next-generation neuromorphic computing.忆阻器在神经网络计算中具有巨大潜力.由于其独特的离子迁移和电荷输运特性,钙钛矿忆阻器在外加电压下展示出高阻态和低阻态的优异电阻开关特性.然而,传统三维(3D)钙钛矿的稳定性问题仍然具有挑战.本文在3D钙钛矿薄膜上原位形成了一维(1D)(CH_(3))_(3)SPbI_(3)钙钛矿钝化层,并将其应用于稳定的突触忆阻器.由于异质结电场和离子迁移的耦合机制,忆阻器具有三阻态.忆阻器的开关比从未插入1D层的10,提高到60以上.经过10^(3)秒读取和300开关周期后,3D/1D钙钛矿忆阻器的电阻特性保持不变.通过控制输入电压,忆阻器表现出多项突触可塑性行为,包括长期延时、长期抑制和配对脉冲促进.显然,这种新型器件为下一代神经形态计算提供了新的候选者.

关 键 词：MEMRISTOR perovskite heterojunction ONE-DIMENSION (CH_3)_3SPbI_3 synaptic function 

分 类 号：TN60[电子电信—电路与系统] TB34[一般工业技术—材料科学与工程]