Mechanism of photon-induced performance changes in silicon heterojunction solar cells  

光子诱导硅异质结太阳电池性能变化的机理

作　　者：Qi Deng Haoran Ye Shenglei Huang Zehua Sun Yanyun Yang Lei Li Zhu Ma Rong Su Wei Long Fangdan Jiang Heng Guo Guoqiang Xing Wenzhu Liu Jian Yu 邓琦;叶浩然;黄圣磊;孙泽华;杨艳云;李雷;马柱;苏荣;龙巍;蒋方丹;郭恒;邢国强;刘文柱;俞健(School of New Energy and Materials,Southwest Petroleum University,Chengdu,610500,China;Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences(CAS),Shanghai,201800,China;Tongwei Solar(Chengdu)Ltd.,Chengdu,600200,China;School of Physics and Electronical Science,Chuxiong Normal University,Chuxiong,675000,China;School of Physical Science and Technology,ShanghaiTech University,Shanghai,201210,China;Tianfu Yongxing Laboratory,Chengdu,610213,China)

机构地区：[1]School of New Energy and Materials,Southwest Petroleum University,Chengdu,610500,China [2]Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences(CAS),Shanghai,201800,China [3]Tongwei Solar(Chengdu)Ltd.,Chengdu,600200,China [4]School of Physics and Electronical Science,Chuxiong Normal University,Chuxiong,675000,China [5]School of Physical Science and Technology,ShanghaiTech University,Shanghai,201210,China [6]Tianfu Yongxing Laboratory,Chengdu,610213,China

出　　处：《Science China Materials》2024年第9期2873-2879,共7页中国科学（材料科学）（英文版）

基　　金：supported by the Sichuan Science and Technology Program(2023YFG0098 and 2023ZYD0163);National Natural Science Foundation of China(T2322028);Science and Technology Commission of Shanghai Municipality(22ZR1473200);Chengdu Science and Technology Program(2024-JB00-00010-GX);Sichuan Province Key Laboratory of Display Science and Technology。

摘　　要：Short-wavelength ultraviolet(UV)photons adversely affect hydrogenated amorphous silicon thin films,as well as on silicon heterojunction(SHJ)solar cells and modules.This research examines the impact and mechanisms of photon-induced performance changes.UV A exposure disrupts Si-H bonds,significantly reducing hydrogen content in both intrinsic and doped hydrogenated amorphous silicon(a-Si:H)films.This disruption impairs the interface passivation effect,leading to the degradation of SHJ solar cells and modules,primarily indicated by a decrease in open-circuit voltage(V_(oc))and fill factor(FF).UV irradiation from the front side of SHJ solar cells reduces V_(oc)and FF by 1.38%and 2.28%,respectively,resulting in a 2.28%efficiency decline.Cells irradiated from the backside show decreases in V_(oc)and FF of approximately 1.96%and 2.73%,respectively,leading to an overall efficiency reduction of approximately 3.58%.However,subsequent light-soaking increases V_(oc)and FF by approximately 0.96%and 1.37%,respectively,for frontside-irradiated cells,achieving an overall efficiency improvement of approximately 2.51%.Thus,light-soaking effectively recovers performance losses caused by UV irradiation in SHJ solar cells.This research clarifies the mechanisms influencing the performance of a-Si:H thin films,SHJ solar cells,and modules under UV irradiation and light-soaking,offering significant contributions towards the development of highly efficient and reliable SHJ devices.短波长紫外(UV)光子会对氢化非晶硅薄膜以及硅异质结(SHJ)太阳电池和组件的性能造成不利影响.本研究探讨了光子诱导性能变化的影响和潜在机制.紫外光会破坏Si-H键,导致本征和掺杂氢化非晶硅(a-Si:H)薄膜中的氢含量显著降低,这一过程破坏了界面钝化,导致SHJ太阳电池和组件的退化,主要表现为开路电压(V_(oc))和填充因子(FF)的降低.SHJ太阳电池正面紫外光辐照后,V_(oc)和FF分别降低1.38%和2.28%,效率下降2.28%.对于从背面照射的电池,V_(oc)和FF分别降低约1.96%和2.73%,导致总效率降低约3.58%.然而,对于正面照射的电池,随后的光浸润使V_(oc)和FF分别增加了约0.96%和1.37%,从而使总效率提高了约2.51%.综上所述,光浸润是恢复紫外辐照对SHJ太阳电池性能损失的有效措施.本研究阐明了a-Si:H薄膜、SHJ太阳电池和组件在紫外辐照和光浸润下性能变化的影响机制,为开发高效可靠的SHJ器件提供了重要贡献.

关 键 词：silicon solar cells HETEROJUNCTION UV irradiation light soaking hydrogen content 

分 类 号：TM914.4[电气工程—电力电子与电力传动] TB383.2[一般工业技术—材料科学与工程]