高质量碲镉汞双层异质结材料制备  

Preparation of high-quality mercury cadmium telluride double-hetero structure materials

作　　者：郝斐 折伟林[1] 杨海燕[1] 刘兴新[1] 胡易林 邢晓帅 刘世光 王鑫[1] 孙浩[1] HAO Fei;SHE Wei-lin;YANG Hai-yan;LIU Xing-xin;HU Yi-lin;XING Xiao-shuai;LIU Shi-guang;WANG Xin;SUN Hao(North China Research Institute of Electro-Optics,Beijing 100015,China)

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《激光与红外》2024年第8期1258-1262,共5页Laser & Infrared

摘　　要：本文重点介绍了富汞垂直液相外延技术,在对该技术进行研究时,提出了一种温场优化方法和一种生长方法来提升材料质量和工艺稳定性。最后介绍基于双层异质结材料采用台面结器件加工等碲镉汞探测器组件制备方法,制备中波、长波和甚长波碲镉汞探测器组件的进展情况。This paper focuses on the technology of mercury cadmium telluride(MCT)vertical liquid phase epitaxy,in which a temperature field optimization method and a growth method are proposed to improve the material quality and process stability.The progress in the preparation of mid-wave,long-wave,and very long-wave MCT detector components is based on double-hetero structure materials using methods such as tabletop junction device processing.

关 键 词：碲镉汞 富汞垂直液相外延 p-on-n型异质结 

分 类 号：TN305[电子电信—物理电子学] TN213