Flexible printed three dimensional(3D)integrated carbon nanotube complementary metal oxide semiconductor(CMOS)thin film transistors and circuits  

作　　者：Zhaofeng CHEN Jiaqi LI Min LI Hongxuan GUO Jianwen ZHAO 

机构地区：[1]SEU-FEI Nano-Pico Center,Key Laboratory of MEMS of Ministry of Education,Southeast University,Nanjing 210096,China [2]Printable Electronics Research Center,Division of Nanodevices and Related Nanomaterials,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China [3]School of Nano Technology and Nano Bionics,University of Science and Technology of China,Hefei 230026,China

出　　处：《Science China(Information Sciences)》2024年第9期276-289,共14页中国科学（信息科学）（英文版）

基　　金：supported by National Key Research and Development Program of China(Grant No.2020YFA0714700);National Natural Science Foundation of China(Grant Nos.62274174,12274073);Key Research and Development Program of Jiangsu Province(Grant No.BK20232009);Cooperation Project of Vacuum Interconnect Research Facility(NANO-X)of Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences(Grant No.F2208)。

摘　　要：The threshold voltage modulation of carbon nanotube thin-film transistors(TFTs)and flexible three-dimensional(3D)integration circuits has become hot research topics for carbon-based electronics.In this paper,a doping-free gate electrode technology is introduced to significantly modulate the threshold voltage of polymer-sorted semiconducting single-walled carbon nanotube(sc-SWCNT)TFTs in combination with the highly effective gate-controlling ability of solid-state electrolyte thin films as the dielectrics.A systematic investigation was conducted on the impact of printed silver,evaporated silver,and evaporated aluminum(Al)gate electrodes on the threshold voltage of flexible printed bottom-gate and top-gate SWCNT TFTs.The results indicate that the SWCNT TFTs with Al gate electrodes exhibit enhancement-mode characteristics with excellent electrical properties,such as the negative threshold voltages(-0.6 V),high I_(on)/I_(off)(up to 10^(6)),low subthreshold swing(61.4 mV·dec^(-1)),and small hysteresis.It is attributed to either the formation of lower work function thin films(Al_(2)O_(3))at the electrode/dielectric layer interfaces through the natural oxidation of the Al bottom-gate electrodes or the dipole reaction of the Al top-gate electrodes from X-ray photoelectron spectroscopy(XPS)and ultraviolet photoelectron spectroscopy(UPS)data.In addition,3D complementary metal-oxide-semiconductor(CMOS)inverters with common gate electrodes were constructed using the resulting enhancement-mode P-type SWCNT TFTs and matched N-type SWCNT TFTs,which shows high voltage gain(34),rail-to-rail output and high noise margins(80.04%,V_(DD)=-1 V)as well good mechanical flexibility at low operation voltages.It demonstrates that SWCNT TFTs have great advantages for building large-scale 3D flexible integrated circuits.

关 键 词：three-dimensional CMOS circuits printing technology polymer-sorted semiconducting carbon nanotubes enhancement-mode thin-film transistors threshold voltage modulation 

分 类 号：TN304[电子电信—物理电子学] TN321.5