Characterization of the current crowding effect on chip surface using a quantum wide-field microscope  

作　　者：Rui Zhao Ding Wang Huan Fei Wen Yunbo Shi Jun Tang Jun Liu 赵锐;王丁;温焕飞;石云波;唐军;刘俊(Science and Technology on Electronic Test&Measurement Laboratory,North University of China,Taiyuan 030051,China)

机构地区：[1]Science and Technology on Electronic Test&Measurement Laboratory,North University of China,Taiyuan 030051,China

出　　处：《Chinese Optics Letters》2024年第6期123-128,共6页中国光学快报（英文版）

基　　金：supported by the National Natural Science Foundation of China (Nos.51821003,52275551,and 51922009);Shanxi Scholarship Council of China (No.2021–117)。

摘　　要：We characterize the current crowding effect for microwave radiation on a chip surface based on a quantum wide-field microscope combining a wide-field reconstruction technique. A swept microwave signal with the power of 0–30 d Bm is supplied to a dumbbell-shaped microstrip antenna, and the significant differences in microwave magnetic-field amplitudes attributed to the current crowding effect are experimentally observed in a 2.20 mm ×1.22 mm imaging area. The normalized microwave magnetic-field amplitude along the horizontal geometrical center of the image area further demonstrates the feasibility of the characterization of the current crowding effect. The experiments indicate the proposal can be qualified for the characterization of the anomalous area of the radio-frequency chip surface.

关 键 词：current crowding effect microwave field on chip surface quantum wide-field microscope nitrogen-vacancy center 

分 类 号：TN40[电子电信—微电子学与固体电子学] TP391.41[自动化与计算机技术—计算机应用技术]