GaN衬底上ZnS纳米薄膜的结构、光学和电学特性  

Structure and Optical and Electrical Properties of ZnS Nano Thin Films on GaN Substrates

作　　者：王彩凤 邢震岳 WANG Caifeng;XING Zhenyue(School of Aeronautical Engineering,Shandong University of Aeronautics,Binzhou 256603,China)

机构地区：[1]山东航空学院航空工程学院,山东滨州256603

出　　处：《山东航空学院学报》2024年第4期55-59,共5页Journal of Binzhou University

基　　金：滨州市社会发展科技创新计划项目(2023SHFZ023);滨州学院科研基金项目(BZXYLG2117)。

摘　　要：采用脉冲激光沉积技术在GaN衬底上制备了ZnS纳米薄膜。通过XRD和SEM对薄膜结晶情况和截面结构进行了表征,并测量了ZnS纳米薄膜的透射光谱和ZnS/GaN异质结的Ⅰ-Ⅴ特性曲线。ZnS纳米薄膜在可见光区的透过率较高,平均透过率在80%以上,经过退火处理,透过率增大。Ⅰ-Ⅴ特性曲线表明,ZnS/GaN形成了异质结,具有和普通二极管相似的整流特性。在正向偏压下电流随着电压的增加而增大。退火处理后异质结的导通电压减小。这些特性表明,ZnS纳米薄膜在无人机载传感器和航空电子系统中的光电二极管、光电探测器、光伏电池等领域有着潜在的应用价值。ZnS nano thin films were prepared on GaN substrates using pulsed laser deposition technology.The crystallization and cross-sectional structure of the thin films were characterized by XRD and SEM,and the transmission spectra of ZnS nano thin films and theⅠ-Ⅴcharacteristic curves of ZnS/GaN heterojunctions were measured.ZnS nano thin films have a high transmittance in the visible light region,with an average transmittance of over 80%.After annealing,the transmittance increases.TheⅠ-Ⅴcharacteristic curve indicates that ZnS/GaN forms a heterojunction and has rectification characteristics similar to ordinary diodes.Under forward bias,the current increases with the increase of voltage.The conduction voltage of the heterojunction after annealing treatment decreases.These characteristics indicate that ZnS nano thin films have potential applications in such fields as photodiodes,photodetectors and photovoltaic cells in unmanned aerial vehicle sensors and avionics systems.

关 键 词：ZnS纳米薄膜 GaN衬底 脉冲激光沉积 透射光谱 Ⅰ-Ⅴ特性曲线 

分 类 号：TB383[一般工业技术—材料科学与工程] TN23[电子电信—物理电子学]