High-power,electrically-driven continuous-wave 1.55-μm Si-based multi-quantum well lasers with a wide operating temperature range grown on wafer-scale InP-on-Si(100)heterogeneous substrate  

作　　者：Jialiang Sun Jiajie Lin Min Zhou Jianjun Zhang Huiyun Liu Tiangui You Xin Ou 

机构地区：[1]National Key Laboratory of Materials for Integrated Circuits,Shanghai Institute of Microsystem and Information Technology,CAS,Shanghai 200050,China [2]Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,100049 Beijing,China [3]College of Information Science and Engineering,Jiaxing University,Jiaxing 314001,China [4]Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,100190 Beijing,China [5]Department of Electronic and Electrical Engineering,University College London,London WC1E 7JE,UK

出　　处：《Light(Science & Applications)》2024年第8期1512-1523,共12页光（科学与应用)（英文版）

基　　金：supported by the National Natural Science Foundation of China(62293521,62174167,12205119);Shanghai Rising-Star Program(22QA1410700);China Postdoctoral Science Foundation(2022M723282);Zhejiang Provincial Natural Science Foundation of China(LQ23F040002);Jiaxing Municipal Public Welfare Research Project(2022AY10027).

摘　　要：A reliable,efficient and electrically-pumped Si-based laser is considered as the main challenge to achieve the integration of all key building blocks with silicon photonics.Despite the impressive advances that have been made in developing 1.3-μm Si-based quantum dot(QD)lasers,extending the wavelength window to the widely used 1.55-μm telecommunication region remains difficult.In this study,we develop a novel photonic integration method of epitaxial growth of III-V on a wafer-scale InP-on-Si(100)(InPOS)heterogeneous substrate fabricated by the ion-cutting technique to realize integrated lasers on Si substrate.This ion-cutting plus epitaxial growth approach decouples the correlated root causes of many detrimental dislocations during heteroepitaxial growth,namely lattice and domain mismatches.Using this approach,we achieved state-of-the-art performance of the electrically-pumped,continuouswave(CW)1.55-μm Si-based laser with a room-temperature threshold current density of 0.65 kA/cm^(-2),and output power exceeding 155mW per facet without facet coating in CW mode.CW lasing at 120℃ and pulsed lasing at over 130℃ were achieved.This generic approach is also applied to other material systems to provide better performance and more functionalities for photonics and microelectronics.

关 键 词：PUMPED power quantum 

分 类 号：TN248[电子电信—物理电子学]