Anneal-free ultra-low loss silicon nitride integrated photonics  

作　　者：Debapam Bose Mark W.Harrington Andrei Isichenko Kaikai Liu Jiawei Wang Nitesh Chauhan Zachary L.Newman Daniel J.Blumenthal 

机构地区：[1]Department of Electrical and Computer Engineering,University of California Santa Barbara,Santa Barbara,CA 93106,USA [2]Octave Photonics,Louisville,CO 80027,USA

出　　处：《Light(Science & Applications)》2024年第8期1565-1577,共13页光（科学与应用)（英文版）

基　　金：supported by DARPA GRYPHON contract number HR0011-22-2-0008;ARL Award W911NF-22-2-0056.

摘　　要：Heterogeneous and monolithic integration of the versatile low-loss silicon nitride platform with low-temperature materials such as silicon electronics and photonics,III–V compound semiconductors,lithium niobate,organics,and glasses has been inhibited by the need for high-temperature annealing as well as the need for different process flows for thin and thick waveguides.New techniques are needed to maintain the state-of-the-art losses,nonlinear properties,and CMOS-compatible processes while enabling this next generation of 3D silicon nitride integration.We report a significant advance in silicon nitride integrated photonics,demonstrating the lowest losses to date for an anneal-free process at a maximum temperature 250℃,with the same deuterated silane based fabrication flow,for nitride and oxide,for an order of magnitude range in nitride thickness without requiring stress mitigation or polishing.We report record low anneal-free losses for both nitride core and oxide cladding,enabling 1.77 dBm^(-1) loss and 14.9 million Q for 80 nm nitride core waveguides,more than half an order magnitude lower loss than previously reported sub 300℃ process.For 800 nm-thick nitride,we achieve as good as 8.66 dBm^(-1) loss and 4.03 million Q,the highest reported Q for a low temperature processed resonator with equivalent device area,with a median of loss and Q of 13.9 dBm^(-1) and 2.59 million each respectively.We demonstrate laser stabilization with over 4 orders of magnitude frequency noise reduction using a thin nitride reference cavity,and using a thick nitride micro-resonator we demonstrate OPO,over two octave supercontinuum generation,and four-wave mixing and parametric gain with the lowest reported optical parametric oscillation threshold per unit resonator length.These results represent a significant step towards a uniform ultra-low loss silicon nitride homogeneous and heterogeneous platform for both thin and thick waveguides capable of linear and nonlinear photonic circuits and integration with low-temperature material

关 键 词：RESONATOR THICK free 

分 类 号：TN25[电子电信—物理电子学]