Gd_(3)Al_(3)Ga_(2)O_(12):Ce^(3+), Yb^(3+) fluorescent ceramic with highly increased trap density for optical information storage  

作　　者：Jiaocheng Yin Renjie Jiang Junwei Zhang Qiao Hu Miao Zhao Xiaoxia Wang Anlian Pan Hao Ruan 尹教成;蒋仁杰;张君伟;胡巧;赵苗;王晓霞;潘安练;阮昊(College of Materials Science and Engineering,Hunan University,Changsha 410082,China;Photonic Integrated Circuits Center,Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Shanghai 201800,China)

机构地区：[1]College of Materials Science and Engineering,Hunan University,Changsha 410082,China [2]Photonic Integrated Circuits Center,Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Shanghai 201800,China

出　　处：《Chinese Optics Letters》2024年第7期59-65,共7页中国光学快报（英文版）

基　　金：supported by the National Key R&D Program of China(Nos.2021YFB2802000 and 2022YFA1204300);the Shanghai Municipal Science and Technology Commission Innovation Action Plan(No.18DZ1100400);the National Natural Science Foundation of China(Nos.52221001,62090035,62175061,and U19A2090);the Key Program of Science and Technology Department of Hunan Province(Nos.2019XK2001 and 2020XK2001);the Key Research and Development Plan of Hunan Province(No.2023GK2012);the Open Project of Key Laboratory of Nanodevices and Applications,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences(No.22ZS01);the Natural Science Foundation of Hunan Province(No.2022JJ30167).

摘　　要：Electron-trapping materials,due to their exceptional ability of energy storage and controllable photon release under external stimulation,have attracted considerable attention in the field of optical information storage(OIS).In this work,Gd_(3)Al_(3)Ga_(2)O_(12):Ce^(3+), Yb^(3+)fluorescent ceramics,were developed using air and vacuum sintering technology.By co-doping Ce^(3+)and Yb^(3+),the trap density was significantly increased by 7.5 times compared to samples containing only Ce^(3+).Vacuum annealing further enhanced trap density by 1.6 times compared to samples sintered solely in air,while generating deep traps(1.44 eV),making Gd_(3)Al_(3)Ga_(2)O_(12):Ce^(3+), Yb^(3+) an excellent OIS medium.This work is expected to facilitate the development of OIS materials.

关 键 词：electron-trapping materials optical information storage Gd_(3)Al_(3)Ga_(2)O_(12):Ce^(3+) Yb^(3+) two-step sintering method 

分 类 号：TB34[一般工业技术—材料科学与工程] TP333[自动化与计算机技术—计算机系统结构]