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作 者:Sergey Olegovich Slipchenko Aleksandr Aleksandrovich Podoskin Ilia Vasil'evich Shushkanov Marina Gennad'evna Rastegaeva Artem Eduardovich Rizaev Matvey Igorevich Kondratov Artem Evgen'evich Grishin Nikita Aleksandrovich Pikhtin Timur Anatol'evich Bagaev Maxim Anatol'evich Ladugin Aleksandr Anatol'evich Marmalyuk Vladimir Aleksandrovich Simakov
机构地区:[1]Ioffe Institut,Russian Academy of Sciences,St.Petersburg 194021,Russia [2]Open Joint-Stock Company M.F.Stel’makh Polyus Research Institute,Moscow 117342,Russia [3]RUDN University,Moscow 117198,Russia
出 处:《Chinese Optics Letters》2024年第7期81-85,共5页中国光学快报(英文版)
摘 要:The generation of high-power laser pulses using a compact hetero-integrated assembly based on a semiconductor laser with a dual-element composite 2μm×100μm aperture and a compact heterothyristor switch is demonstrated.The achieved peak optical power was 33 W with a pulse duration of 3 ns at a thyristor operating voltage of 55 V.The leading edge of the laser pulse turn-on was 50 ps to a power level of 24.7 W,and the turn-on delay between the elements of the composite aperture was 160 ps.
关 键 词:hetero-integrated assembly semiconductor lasers thyristor switches LIDAR gain-switching mode laser heterostructure
分 类 号:TN248.4[电子电信—物理电子学]
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