基于去趋势波动分析方法的直拉单晶硅拉速曲线研究  

Research on pulling speed curve of Czochralski single crystal silicon based on method of detrended fluctuation analysis

作　　者：汤辉 吴彦国 TANG Hui;WU Yanguo(Luoyang Vocational College of Culture and Tourism,Luoyang,Henan 471000,China;Technology Department,MCL Electronic Materials Co.,Ltd.,Luoyang,Henan 471000,China)

机构地区：[1]洛阳文化旅游职业学院教育学院,河南洛阳471000 [2]麦斯克电子材料股份有限公司技术部,河南洛阳471000

出　　处：《计算机应用文摘》2024年第18期154-156,共3页

摘　　要：直拉单晶硅的生长是半导体工业中的关键步骤,其过程具有动态连续性。提拉速度的波动直接影响最终产品的成品率和质量。在直拉单晶硅的等径生长过程中,稳定的提拉速度有助于提高晶体的质量;而提拉速度波动过大会导致晶体中出现原生缺陷,甚至可能引发晶体直径控制的失效。采用去趋势波动分析法(DFA)对直拉单晶硅的拉速曲线进行处理,结合具体的单晶硅生长过程,分析了拉速出现较大波动的原因。结果表明,DFA对研究直拉单晶硅拉速曲线具有较好的适用性,并且结合工艺过程开展的研究对优化工艺和提高生产稳定性具有重要的指导意义。The growth of Czochralski silicon is a key step in the semiconductor industry,and its process has dynamic continuity.The fluctuation of lifting speed directly affects the yield and quality of the final product.During the equal diameter growth process of Czochralski silicon,a stable pulling speed helps to improve the quality of the crystal.Excessive fluctuations in pulling speed can lead to the appearance of primary defects in the crystal,and may even cause the failure of crystal diameter control.The detrended fluctuation analysis(DFA)method was used to process the pulling speed curve of Czochralski silicon,and combined with the specific growth process of silicon,the reasons for the large fluctuations in pulling speed were analyzed.The results indicate that the trend fluctuation analysis method has good applicability in studying the pulling speed curve of Czochralski silicon,and the research conducted in combination with the process has important guiding significance for optimizing the process and improving production stability.

关 键 词：单晶硅 拉速 MATLAB 去趋势波动分析 

分 类 号：TN304[电子电信—物理电子学]