大功率半导体激光器端面特性改善的研究  

Study on the Improvement of Facet Characteristics of High-Power Semiconductor Lasers YAN Bozhao,CUI Bifeng,CHEN Fen,CHEN Zhongbiao,

作　　者：闫博昭 崔碧峰 陈芬 陈中标 郑翔瑞 杨春鹏 王晴 高欣雨 ZHENG Xiangrui;YANG Chunpeng;WANG Qing;GAO Xinyu(Key Lab.of Opto-Electronics Technol.of The Ministry of Education,Faculty of Information Technol.,Beijing University of Technol.,Beijing 100124,CHN)

机构地区：[1]北京工业大学信息学部光电子技术教育部重点实验室,北京100124

出　　处：《半导体光电》2024年第4期623-627,共5页Semiconductor Optoelectronics

基　　金：国家自然科学基金项目(60908012,61575008,61775007);北京市自然科学基金项目(4172011)。

摘　　要：针对大电流下前腔面不稳定导致出现灾变性光学损伤(COMD)的问题,提出一种双区电极的半导体激光器,并对该结构激光器的COMD阈值、峰值功率、阈值电流、光谱稳定性及翘曲效应进行研究。在相同工艺条件下测试了单一电极结构和双区电极结构半导体激光器的COMD阈值、峰值功率、阈值电流、波长红移速度等参数。结果表明:在同等工艺条件下,主增益区阈值电流为80 mA,阈值电流降低20%,在窗口区15 mA电流的驱动下,双区电极的半导体激光器对比单电极半导体激光器COMD阈值能够提高13%、峰值功率能够提高12%,同时减少了波长红移并改善了翘曲效应。To address the instability of the front cavity surface under high current,which can lead to catastrophic optical mirror damage(COMD),a semiconductor laser with a dual-zone electrode structure was proposed.This study investigated the COMD threshold,peak power,threshold current,spectral stability,and kink effect of this laser structure.Under the same process conditions,the COMD threshold,peak power,threshold current,and wavelength redshift rate of semiconductor lasers with a single-electrode structure and dual-zone electrode structure were tested.The results showed that,under the same process conditions,with a threshold current of 80 mA in the main gain region,the threshold current of the laser with the dual-zone electrode structure was reduced by 20%.When driven by a 15 mA current in the window region,compared to the single-electrode semiconductor laser,the semiconductor laser with the dual-zone electrodes could increase the COMD threshold by 13%,increase the peak power by 12%,and decrease the wavelength redshift while improving the kink effect.

关 键 词：红光半导体激光器 大功率 腔面灾变性光学损伤 双区电极 

分 类 号：TN248.4[电子电信—物理电子学]