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作 者:赵娅 庄众 魏梦园 蒋青松 杨潇 荀威 刘雨昊 ZHAO Ya;ZHUANG Zhong;WEI Mengyuan;JIANG Qingsong;YANG Xiao;XUN Wei;LIU Yuhao(Faculty of Electronic Information Engineering,Huaiyin Institute of Technology,Huai’an 223003,China;School of Physics and Optoelectronic Engineering,Hainan University,Haikou 570100,China;School of Marine Science and Engineering,Hainan University,Haikou 570100,China;Hainan Provincial Key Laboratory of Fine Chemistry,Hainan University,Haikou 570100,China)
机构地区:[1]淮阴工学院电子信息工程学院,淮安223003 [2]海南大学物理与光电工程学院,海口570100 [3]海南大学海洋科学与工程学院,海口570100 [4]海南大学,海南省精细化工实验室,海口570100
出 处:《人工晶体学报》2024年第9期1640-1647,共8页Journal of Synthetic Crystals
基 金:国家自然科学基金(61804062,62105083)。
摘 要:CuPbSbS_(3)半导体材料因具有吸收系数高、禁带宽度适中等光电特性,在太阳能电池中具有广阔应用前景。本文采用丁基二硫代氨基甲酸(BDCA)溶液法,在管式炉退火过程中沉积CuPbSbS_(3)薄膜。通过调节BDCA溶液中二硫化碳的比例,实现CuPbSbS_(3)薄膜的可控沉积。通过扫描电子显微镜、X射线衍射仪等测试技术表征CuPbSbS_(3)薄膜的形貌和晶体结构,结果表明当乙醇、正丁胺、二硫化碳体积比为7.4∶9.6∶6时,所沉积的CuPbSbS_(3)薄膜结晶形态较好。此外,构建结构为FTO/SnO_(2)/CuPbSbS_(3)/Spiro-OMeTAD/Ag的太阳能电池,测试其莫特-肖特基曲线、奈奎斯特阻抗谱、暗电流密度-电压曲线以及对称器件在暗态下的电流-电压曲线,进一步研究CuPbSbS_(3)太阳能电池的界面电荷传输动力学。电学测试结果表明,所沉积的CuPbSbS_(3)薄膜内部的缺陷复合中心密度与电荷传输电阻降低,光生载流子的非辐射复合减少,载流子输运性能提高。相应的CuPbSbS_(3)太阳能电池实现了0.81%的光电转换效率,短路电流密度为9.08 mA·cm^(-2),开路电压达到了250 mV。研究成果为高质量CuPbSbS_(3)薄膜沉积提供了实验基础。Owing to the excellent optoelectronic characteristics,such as high absorption coefficient and suitable bandgap,CuPbSbS_(3)semiconductor materials have a wide application prospect in solar cells.In this paper,CuPbSbS_(3)films were deposited in the annealing process of tube furnace through butyldithiocarbamic acid(BDCA)solution method.CuPbSbS_(3)film is regulated deposited by adjusting the proportion of CS2 in BDCA solution.The effect of the proportion of CS2 in BDCA solution on the surface morphology and crystal structure of CuPbSbS_(3)films was analyzed by scanning electron microscopy and X-ray diffractometer.The results indicate that deposited CuPbSbS_(3)film exhibits good crystalline morphology by fixing the volume ratio of ethanol,n-butylamine,and carbon disulfide of 7.4∶9.6∶6.Then,solar cells with the structure of FTO/SnO_(2)/CuPbSbS_(3)/Spiro-OMeTAD/Ag were fabricated.The interfacial charge transport kinetics of CuPbSbS_(3)solar cells were further investigated by Mott-Schottky curves,Nyquist impedance spectra,dark current density-voltage curves,and current-voltage curves of symmetrical devices in the dark state.The results from the above electrical measurements demonstrate that the defect recombination center density and charge transport resistance of the deposited CuPbSbS_(3)films is effectively reduced,decreasing the non-radiative recombination of photogenerated carriers and improving the carrier transport ability.Finally,the CuPbSbS_(3)solar cell shows a photoelectric conversion efficiency of 0.81%(a short-circuit current density of 9.08 mA·cm^(-2) and an open-circuit voltage of 250 mV).The relevant research results provide an experimental basis for the fabrication of high-quality CuPbSbS_(3)films.
关 键 词:CuPbSbS_(3)薄膜 富硫前驱体溶液 丁基二硫代氨基甲酸溶液法 退火 光电转换效率 太阳能电池
分 类 号:TM914.4[电气工程—电力电子与电力传动]
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