腔体材料对氧化铜箔衬底上制备石墨烯的影响  

Effects of Chamber Materials on the Preparation of Graphene on the Oxidized Copper Foils Substrate

作　　者：沈曦 史永贵 万玉慧 付影 马嘉恒 杨浩东 王艺佳 SHEN Xi;SHI Yonggui;WAN Yuhui;FU Ying;MA Jiaheng;YANG Haodong;WANG Yijia(School of Materials Science and Engineering,Xi’an University of Technology,Xi’an 710048,China)

机构地区：[1]西安理工大学材料科学与工程学院,西安710048

出　　处：《人工晶体学报》2024年第9期1648-1654,共7页Journal of Synthetic Crystals

基　　金：碑林区科技计划项目(GX2233)。

摘　　要：传统的化学气相沉积法制备的石墨烯普遍存在晶畴面积小、晶界缺陷多的问题,严重制约了大面积石墨烯的性能及应用。本文采用低压化学气相沉积技术在受限生长腔中的氧化铜箔衬底上制备石墨烯,对比研究了石英和刚玉两种材质的受限生长腔中,不同甲烷流量和生长时间条件下氧化铜箔衬底上石墨烯的形核生长状况。结果表明,相同生长条件下,相较于石英受限生长腔,虽然刚玉受限生长腔中石墨烯的晶畴尺寸较小,但是氧化铜箔衬底表面沉积的杂质颗粒较少,因而石墨烯的形核密度较低,晶体质量较高,更有利于大尺寸、高质量石墨烯的制备。Graphene prepared by the traditional chemical vapor deposition are generally subjected to small domain area and multiple grain boundary defects,which seriously restricts the performance and application of large-area graphene.In this study,the low-pressure chemical vapor deposition technology was used to prepare graphene on the oxidized copper foils substrate in the restricted growth chambers.The growth behavior of the graphene on two kinds of restricted growth chambers(quartz and corundum)were studied.The effects of the quartz restricted growth chamber and the corundum restricted growth chamber on the nucleation and growth of graphene on the oxidized copper foils under different methane flow rates and growth time were compared.The results indicates that,compared to the quartz restricted growth chamber,although the domain sizes of graphene on the oxidized copper foils substrate in the restricted growth chamber of corundum are smaller,there are fewer deposited impurity particles on the surface of the oxidized copper foils substrate,resulting in lower nucleation density and higher crystal quality of graphene,which is more conducive to the preparation large-sized and high-quality graphene.

关 键 词：石墨烯 低压化学气相沉积 受限生长腔 氧化铜箔 衬底 形核 

分 类 号：TQ127.11[化学工程—无机化工]