Gate Tunable Labyrinth Domain Structures in a van der Waals Itinerant Ferromagnet Cr_(7)Te_(8)  

作　　者：Kui Meng Zeya Li Yicheng Shen Xiangyu Bi Junhao Rao Yuting Qian Zhansheng Gao Peng Chen Caiyu Qiu Feng Qin Jinxiong Wu Feng Luo Junwei Huang Hongtao Yuan 孟奎;李泽亚;申艺成;毕翔宇;饶俊豪;钱玉婷;高战胜;陈朋;邱彩玉;秦峰;吴金雄;罗锋;黄俊伟;袁洪涛(National Laboratory of Solid State Microstructures,Jiangsu Key Laboratory of Artificial Functional Materials,College of Engineering and Applied Sciences,and Collaborative Innovation Center of Advanced Microstructures,Nanjing University,Nanjing 210000,China;Center for the Physics of Low-Dimensional Materials,Henan Joint International Research Laboratory of New Energy Materials and Devices,School of Physics and Electronics,Henan University,Kaifeng 475004,China;Tianjin Key Lab for Rare Earth Materials and Applications,Center for Rare Earth and Inorganic Functional Materials,Smart Sensor Interdisciplinary Science Center,School of Materials Science and Engineering,Nankai University,Tianjin 300350,China)

机构地区：[1]National Laboratory of Solid State Microstructures,Jiangsu Key Laboratory of Artificial Functional Materials,College of Engineering and Applied Sciences,and Collaborative Innovation Center of Advanced Microstructures,Nanjing University,Nanjing 210000,China [2]Center for the Physics of Low-Dimensional Materials,Henan Joint International Research Laboratory of New Energy Materials and Devices,School of Physics and Electronics,Henan University,Kaifeng 475004,China [3]Tianjin Key Lab for Rare Earth Materials and Applications,Center for Rare Earth and Inorganic Functional Materials,Smart Sensor Interdisciplinary Science Center,School of Materials Science and Engineering,Nankai University,Tianjin 300350,China

出　　处：《Chinese Physics Letters》2024年第9期122-132,共11页中国物理快报（英文版）

基　　金：supported by the National Natural Science Foundation of China(Grant Nos.92365203,52072168,51861145201,52302180,and 12204232);the National Key Research and Development Program of China(Grant No.2021YFA1202901);the Science and Technology Development Project of Henan Province(Grant No.242102230140);the China Postdoctoral Science Foundation(Grant No.2024M750775)。

摘　　要：Manipulating magnetic domain structure plays a key role in advanced spintronics devices.Theoretical rationale is that the labyrinthine domain structure,normally appearing in ferromagnetic thin films with strong magnetic anisotropy,shows a great potential to increase data storage density for designing magnetic nonvolatile memory and logic devices.However,an electrical control of labyrinthine domain structure remains elusive.Here,we demonstrate the gate-driven evolution of labyrinthine domain structures in an itinerant ferromagnet Cr_(7)Te_(8).By combining electric transport measurements and micromagnetic finite difference simulations,we find that the hysteresis loop of anomalous Hall effect in Cr_(7)Te_(8)samples shows distinct features corresponding to the generation of labyrinthine domain structures.The labyrinthine domain structures are found to be electrically tunable via Li-electrolyte gating,and such gate-driven evolution in Cr_(7)Te_(8)originates from the reduction of the magnetic anisotropic energy with gating,revealed by our micromagnetic simulations.Our results on the gate control of anomalous Hall effect in an itinerant magnetic material provide an opportunity to understand the formation and evolution of labyrinthine domain structures,paving a new route towards electric-field driven spintronics.

关 键 词：RATIONAL ELECTROLYTE FERROMAGNETIC 

分 类 号：O469[理学—凝聚态物理]