应用于DC/DC的双模冗余抗SET加固方法研究  

Research on Dual Modular Redundancy Anti-SET Hardened for DC/DC

作　　者：郭仲杰 王亚朋 任瑗 GUO Zhong-jie;WANG Ya-peng;REN Yuan(Xi'an University of Technology,Xi'an 710048,China)

机构地区：[1]西安理工大学,自动化与信息工程学院,陕西西安710048

出　　处：《电力电子技术》2024年第7期27-32,共6页Power Electronics

基　　金：国家自然科学基金面上项目(62171367);陕西省重点研发计划(2021GY-060);陕西省创新能力支撑计划(2022TD-39);西安理工大学校企协同基金(252062213)。

摘　　要：基于180 nm商用BCD工艺,研究和模拟了单粒子瞬态效应(SET)对Boost型DC/DC转换器带隙基准(BGR)造成的影响,并针对该影响提出了一种基于双模冗余(DMR)技术的抗SET加固方法。采用自带阈值比较器所构成的SET检测电路实现对基准电压的实时动态检测,通过脉冲展宽技术来进一步隔离SET的影响,确保了BGR在受到高能粒子入射时,基准电压在较小的跃变下快速恢复。实验结果表明,在输入电压范围2.9~4.5 V、高能粒子的线性能量传递值100 MeV·cm2/mg的条件下,SET所造成的基准电压最大跃变从2.791 V降至38 mV,恢复时间从800 ns减小到18 ns,SET抑制能力达到98.3%,确保了DC/DC转换器的输出电压稳定。与传统RC加固方案进行对比,该方法具有明显的优势,面积优化28.09%,恢复时间提升99%以上。The effect of single event transient effect(SET)on the band-gap reference(BGR)of Boost DC/DC converter is studied and simulated based on 180 nm commercial BCD process,and an anti-SET hardened method based on dual mode redundancy(DMR)is proposed to address the effect.The SET detection circuit composed of a comparator with its own threshold is used to realize real-time dynamic detection of reference voltage,and the influence of SET is fur-ther isolated by pulse widening technology,which ensures that the reference voltage can recover quickly under small jump when BGR is incident by high-energy particles.The experimental results show that under the conditions of input voltage range of 2.9~4.5 V and linear energy transfer value of high-energy particles 100 MeV·cm2/mg,the maximum jump of reference voltage caused by SET decreases from 2.791 V to 38 mV,the recovery time decreases from 800 ns to 18 ns,and the inhibition ability of SET reaches 98.3%.The output voltage of the DC/DC converter is stable.Com-pared with the traditional RC hardening scheme,this method has obvious advantages,the area optimization is 28.09%,and the recovery time is increased by more than 99%.

关 键 词：转换器 单粒子瞬态效应 带隙基准 

分 类 号：TM46[电气工程—电器]