SiC Double Trench MOSFET with Split Gate and Integrated Schottky Barrier Diode for Ultra-low Power Loss and Improved Short-Circuit Capability  

作　　者：Jinping ZHANG Qinglin WU Zixun CHEN Hua ZOU Bo ZHANG 

机构地区：[1]State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China

出　　处：《Chinese Journal of Electronics》2024年第5期1127-1136,共10页电子学报（英文版）

基　　金：supported by the China Postdoctoral Science Foundation(Grant No.2020M682607).

摘　　要：A silicon carbide(SiC)double trench metal-oxide-semiconductor field effect transistor(DTMOS)with split gate(SG)and integrated Schottky barrier diode(SBD)is proposed for the first time.The proposed device features two enhanced deep trenches in the surface,in which a source-connected SG with a thicker dielectric layer is located at the bottom of the deep gate trench and an integrated SBD is located at the sidewall of the deep source trench(DST).Combined with shielding effect provided by the P+shield layer under the DST and integrated SBD,the proposed structure not only reduces the reverse transfer capacitance(C_(rss))and gate-drain charge(Q_(gd))but also restrains the saturation drain current(I_(d,sat))and improves the diode performance of the device.Numerical analysis results show that compared with the Con-DTMOS and Con-DTMOS with external SBD diode,the turn-on loss(E_(on))and turn-off loss(E_(off))for the proposed device are reduced by 56.4%/70.4%and 56.6%/69.9%,respectively.Moreover,the Id,sat at the Vgs of 18 V for the proposed device is reduced by 74.4%and the short-circuit withstand time(t_(SC))is improved by about 7.5 times.As a result,an ultra-low power loss and improved short-circuit capability is obtained for the proposed device.

关 键 词：Silicon carbide Metal-oxide-semiconductor field effect transistor(MOSFET) Specific on resistance Reverse transfer capacitance High frequency figure of merit Forward conduction voltage drop Turn-on loss Turn-off loss Saturated drain current Short-circuit withstand time 

分 类 号：TN386[电子电信—物理电子学] TN311.7