Investigating the Effects of V_(2)C MXene on Improving the Switching Stability and Reducing the Operation Voltages of TiO_(2)-Based Memristors  

作　　者：Nan HE Lei WANG Yi TONG 

机构地区：[1]College of Electronic and Optical Engineering,College of Flexible Electronics(Future Technology),and College of Integrated Circuit Science and Engineering,Nanjing University of Posts and Telecommunications,Nanjing 210023,China [2]Gusu Laboratory of Materials,Suzhou 215000,China

出　　处：《Chinese Journal of Electronics》2024年第5期1181-1187,共7页电子学报（英文版）

基　　金：supported by the 2030 Major Project of the Chinese Ministry of Science and Technology(Grant No.2021ZD0201200);the High-End Foreign Experts Project of the Ministry of Science and Technology(Grant No.G2022178034L);the Postgraduate Research and Practice Innovation Program of Jiangsu Province(Grant Nos.KYCX190956 and 4600KYCX220928);the Jiangsu Province Research Foundation(Grant Nos.BK20191202 and 16KJA510003).

摘　　要：Three-atoms-type V_(2)C MXene,an emerging class of transition metal carbides,has attracted tremendous attention in the fabrication of advanced memristive devices due to its excellent electrochemical properties.However,the inserted effects and corresponding physical mechanisms of inserting V_(2)C on traditional TiO_(2)-based memristors have not been clearly explored.In this work,exhaustive electrical characterizations of the V_(2)C/TiO_(2)-based devices exhibit enhanced performance(e.g.,improved switching stability and lower operating voltages)compared to the TiO_(2)-based counterparts.In addition,the advantaged influences of the inserted V_(2)C have also been studied by means of first-principles calculations,confirming that V_(2)C MXene enables controllable internal ionic process and facilitated formation mechanism of the Ag conductive filaments.This work demonstrates a way to combine experimental and theoretical investigations to reveal the positive effects of introducing V_(2)C MXene on memristor,which is beneficial for fabricating performance-enhanced memristors.

关 键 词：MEMRISTOR V_(2)C MXene First-principles calculation Switching stability Formation mechanism 

分 类 号：TN60[电子电信—电路与系统]