锂掺杂对氧化铜薄膜光电性能的影响  

Effect of Li Doping on the Properties of CuO Films Deposited by Pulse Laser Deposition

作　　者：向玉春 朱建雷 刘晓静 XIANG Yu-chun;ZHU Jian-lei;LIU Xiao-jing(Xianyang Vocational&Technical College,Xianyang 712000,China;Shaanxi University of Science and Technology,Xi'an 710000,China)

机构地区：[1]咸阳职业技术学院,陕西咸阳712000 [2]陕西科技大学,陕西西安710000

出　　处：《光学与光电技术》2024年第4期43-48,共6页Optics & Optoelectronic Technology

基　　金：陕西省自然科学基础研究计划(2022JQ416);咸阳职业技术学院2024年度科研基金(2024KJC04)资助项目。

摘　　要：通过脉冲激光沉积的方法在玻璃衬底上制备Li掺杂的CuO薄膜,并研究了Li掺杂对CuO薄膜结构及性能的影响。Li掺杂浓度从0 wt%增加到2 wt%时CuO薄膜的结晶性变好,再由2 wt%增加到3 wt%时结晶性变差;在掺杂了Li之后,载流子浓度提高了至少3个数量级,并且呈现出先增大后减小的趋势,迁移率的变化正好与之相反。当掺杂浓度为2wt%时,载流子浓度达到最大,为1.10×10^(19) cm^(-3),电阻率低至76Ω·cm。这主要是由于不同浓度Li掺杂时,Li原子进入CuO不同的晶格位置造成的。通过Li掺杂,CuO薄膜光电性能有了一定改善,为下一步研究CuO薄膜太阳能电池提供了理论指导。Li doped CuO films are prepared on glass substrate by pulsed laser deposition,and the effect of Li doping on the structure and properties of CuO films is studied.The crystallinity of CuO films becomes better when Li doping concentration increases from 0 wt% to 2 wt%,and then becomes worse when Li doping concentration increases from 2 wt%to 3 wt%.After doping Li,the carrier concentration increases by at least three orders of magnitude,and it shows a trend of first increasing and then decreasing.The change of mobility is just the opposite.When the doping concentration is 2 wt%,the carrier concentration reaches the maximum,which is 1.10×10~(19) cm~(-3),and the resistivity is as low as 76 Ω·cm.This is mainly due to the fact that Li atoms enter different lattice positions of CuO when doped with different concentrations of Li.The electrical and optical properties of CuO thin films doped with Li have been improved to some extent,which provides theoretical guidance for further research of CuO thin film solar cells.

关 键 词：脉冲激光沉积 氧化铜 Li掺杂 导电类型 电阻率 

分 类 号：TB383.2[一般工业技术—材料科学与工程]