一种高精度低功耗带隙基准电压源的设计  

Design of a Band Gap Reference Voltage Source with High Precision and Low Power Consumption

作　　者：王鑫宇 姜丹丹[1] 颜哲 WANG Xinyu;JIANG Dandan;YAN Zhe(College of Communication Engineering,Chengdu University of Information Technology,Chengdu 610225,China;Chengdu Hua Microelectronics Technology Co.LTD,Chengdu 610095,China)

机构地区：[1]成都信息工程大学通信工程学院,四川成都610225 [2]成都华微电子科技股份有限公司,四川成都610095

出　　处：《成都信息工程大学学报》2024年第5期560-566,共7页Journal of Chengdu University of Information Technology

摘　　要：基于0.35μm CMOS工艺,设计了一种高精度低功耗二阶温度补偿带隙基准电压源。该电路利用双极型晶体管基极-发射极电压的叠加来产生一个二阶温度补偿电压,并与一阶温度补偿电压加权相加得到一个低温度系数的基准电压。带隙基准电压源内部放大器结构采用折叠型共源共栅放大器来提高带隙基准电压源的精度。电路采用3~3.6 V电压供电,基准输出电压为1.2555 V左右。仿真结果表明,在-55℃~125℃,典型情况下的温度系数为2.03 ppm/℃,电路PSRR在低频时可达-78 dB,整体静态电流只有10.8μA。与常规带隙基准电压源电路相比,该电路具有低功耗、高精度、高电源电压抑制比、宽工作电压和结构简单等优点。A 0.35μm CMOS technology-based bandgap reference voltage source,with both high accuracy and minimal power consumption,is the focus of this abstract.The circuit uses the superposition of basic-emitter voltages of bipolar transistors to generate a second-order temperature-compensated voltage,which is weighted with the first-order temperature-compensated voltage to get a reference voltage with a low temperature coefficient.The folded common-source common-gate amplifier is used to improve the accuracy of the bandgap reference voltage source.The circuit uses the3-3.6 V voltage supply,the benchmark output voltage is about 1.25 V.Simulation results demonstrate that,in the temperature range of-55℃-125℃,the temperature coefficient is typically 2.68 ppm/℃,with a PSRR of-72 dB at low frequency and a static current of only 10.8μA.This circuit,in comparison to conventional bandgap reference voltage source circuits,has the benefits of low power consumption,high precision,high power supply voltage suppression ratio,wide operating voltage,and a straightforward design.

关 键 词：带隙基准 低功耗 二阶补偿 低温度系数 电源抑制比 

分 类 号：TN433[电子电信—微电子学与固体电子学]