ALD法制备Li掺杂NiO_(x)作为HTL提升PSC性能  

Performance Improvement of PSCs with Lithium Doped Nickel Oxide Prepared by ALD Method as HTL

作　　者：罗启仁 刘昌[1] 吴昊[1] Luo Qiren;Liu Chang;Wu Hao(School of Physics and Technology,Wuhan University,Wuhan 430072,China)

机构地区：[1]武汉大学物理科学与技术学院,武汉430072

出　　处：《半导体技术》2024年第10期885-892,898,共9页Semiconductor Technology

基　　金：国家自然科学基金(11875212)。

摘　　要：空穴传输层(HTL)是影响钙钛矿太阳能电池性能的主要因素之一。氧化镍(NiO_(x))是广为关注的无机HTL材料。原子层沉积(ALD)法具有厚度精准控制、台阶覆盖性好、薄膜质量高等优势,采用ALD法制备了不同比例锂(Li)掺杂的NiO_(x)薄膜。结果显示ALD法制备的NiO_(x)薄膜具有较小的均方根表面粗糙度、较高的光学透过率、较大的禁带宽度,而合适的Li掺杂量可以调制其与钙钛矿吸收层之间的能带匹配,这有利于获得更高的开路电压与短路电流。最终,以Li与NiO_(x)掺杂比为1∶500的NiO_(x)薄膜作为HTL制备了电池器件,开路电压高达1.14 V,短路电流为21.73 mA/cm^(2),填充因子为80.5%,光电转换效率为19.95%,这在宽带隙倒置钙钛矿电池中是一个不错的水平。The hole transport layer(HTL)is one of the main factors affecting the performance of perovskite solar cells.Nickel oxide(NiO_(x))is a very popular inorganic HTL material.Atomic layer deposition(ALD)method has the advantages of precise thickness control,good step coverage and high film quality,and NiO_(x) films doped with lithium(Li)in different proportions were prepared by ALD method.The results show that the NiO_(x) films prepared by ALD method have smaller root mean square surface roughness,higher optical transmittance and larger bandgap width.And the appropriate Li doping amount can modulate the energy band matching between NiO_(x) film and perovskite absorbing layer,which is beneficial to obtain higher open-circuit voltage and short-circuit current.Finally,cell devices were prepared based on NiO_(x) film with a Li and NiO_(x)doping ratio of 1∶500 as HTL.And the open-circuit voltage is as high as 1.14 V,short-circuit current is 21.73 mA/cm^(2),fill factor is 80.5%and power conversion efficiency is 19.95%,which is a good level in wide bandgap inverted perovskite cells.

关 键 词：原子层沉积(ALD) 氧化镍 钙钛矿太阳能电池 锂掺杂 空穴传输层(HTL) 

分 类 号：TM914.42[电气工程—电力电子与电力传动]