基于ICP的Ar等离子体干法刻蚀Ti/Ni/Ag薄膜  

Dry Etching of Ti/Ni/Ag Thin Films by Ar Plasma Based on ICP

作　　者：黄梦茹 卢林红 郭丰杰 马奎 杨发顺 Huang Mengru;Lu Linhong;Guo Fengjie;Ma Kui;Yang Fashun(College of Big Data and Information Engineering,Guizhou University,Guiyang 550025,China;Key Laboratory of Micro-Nano-Electronics and Sofiware Technology of Guizhou Province,Guiyang 550025,China;Semiconductor Power Device Reliability Engineering Research Center of Ministry of Education,Guiyang 550025,China)

机构地区：[1]贵州大学大数据与信息工程学院,贵阳550025 [2]贵州省微纳电子与软件技术重点实验室,贵阳550025 [3]半导体功率器件可靠性教育部工程研究中心,贵阳550025

出　　处：《半导体技术》2024年第10期893-898,共6页Semiconductor Technology

基　　金：贵州省科技成果应用及产业化计划(重大项目)(黔科合成果[2024]重大006)。

摘　　要：在电感耦合等离子体(ICP)刻蚀工艺中,选择合适的刻蚀条件对Ti/Ni/Ag薄膜的刻蚀至关重要。使用氩气(Ar)作为刻蚀气体,研究了射频偏压功率、气体体积流量、腔体压强、刻蚀时间等多个参数对功率芯片背面Ti/Ni/Ag薄膜刻蚀深度的影响,并优化刻蚀工艺参数。实验结果表明,调节射频偏压功率和Ar体积流量可以显著影响刻蚀速率,进而对薄膜的微结构进行有效调控。通过优化工艺参数,在射频偏压功率300 W、Ar体积流量40 cm^(3)/min、腔体压强1.2 Pa、刻蚀时间50 min下,芯片Ti/Ni/Ag薄膜的刻蚀深度达到283.25μm,有效提升了刻蚀效率和刻蚀精度。The selection of appropriate etching conditions in inductively coupled plasma(ICP)etching process is crucial for the etching of Ti/Ni/Ag thin films.With Ar as the etching gas,the effects of several parameters,such as RF bias power,gas volume flow rate,cavity pressure and etching time,on the etching depth of Ti/Ni/Ag thin films on the backside of the power chip were investigated,and the etching process parameters were optimized.The experimental results show that the adjustment of RF bias power and Ar volume flow rate can significantly affect the etching rate,which can effectively regulate the microstructure of the thin film.By optimizing the process parameters,the etching depth of the Ti/Ni/Ag thin film of the chip reaches 283.25μm under the RF bias power of 300 W,the Ar volume flow rate of 40 cm^(3)/min,the cavity pressure of 1.2 Pa and the etching time of 50 min,which effectively enhances the etching efficiency and etching precision.

关 键 词：Ti/Ni/Ag薄膜 电感耦合等离子体(ICP) 刻蚀深度 AR 射频偏压功率 

分 类 号：TN305.7[电子电信—物理电子学]