基于连续双脉冲测试的GaN HEMT动态导通电阻变化及测量方法  

Dynamic On-Resistance Change and Measurement Method of GaN HEMT Based on Continuous Double Pulse Test

作　　者：陈耀峰 Chen Yaofeng(State Power Investment Group Hebei Electric Power Co.,Lid.,Shijiazhuang 050000,China)

机构地区：[1]国家电投集团河北电力有限公司,石家庄050000

出　　处：《半导体技术》2024年第10期920-925,共6页Semiconductor Technology

基　　金：集电线路智能化辅助巡检关键技术研究与应用项目(042300006427)。

摘　　要：实际应用中,GaN HEMT的动态导通电阻会随着工作电压、工作温度等因素的变化而改变,相同温度下的实际值常与静态测量结果有所差异。由于实验条件及测量方法不同,同一型号的器件往往会出现不一致的测试结果,对应用工况的设计与监测带来了困难。针对这一问题,提出了基于连续双脉冲的测试方法,并提出了一种基于差分计算的动态导通电阻提取方法,以更准确地提取器件的动态导通电阻。进一步讨论了母线电压和温度对器件动态导通电阻的影响,当母线电压增大时,GaN HEMT的动态导通电阻表现出先增大后减小的非单调的变化特性,动态导通电阻的标准值基本不随温度变化而改变。最后,探究了GaN HEMT动态导通电阻变化的机理,进一步加深了对器件动态导通电阻变化的理解。In practical applications,the dynamic on-resistance of GaN HEMTs changes with the change of operating voltage,operating temperature and other factors,and the actual value is often diffe-rent from the static measurement result taken at the same temperature.Due to different experimental conditions and measurement methods,inconsistent test results are often obtained for the same type of device,which brings difficulties to the design and monitoring of the application working conditions.To address this issue,a test method based on continuous double pulse was proposed,and a dynamic on-resistance extraction method based on differential computation was proposed to extract the dynamic on-resistance of the device more accurately.The effects of bus voltage and temperature on the dynamic on-resistance of the device were further discussed.When the bus voltage increases,the dynamic on-resistance of the GaN HEMT exhibits a non-monotonic variation characteristic of increasing firstly and then decreasing,and the standard value of the dynamic on-resistance is basically unchanged with variation of temperature.Finally,the mechanism of the dynamic on-resistance change of GaN HEMT was explored to further deepen the understanding of the dynamic on-resistance change of the device.

关 键 词：GaN HEMT 动态导通电阻 连续双脉冲测试 差分计算 机理分析 

分 类 号：TN386.6[电子电信—物理电子学] TN307