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作 者:徐东区 王成勇[1,2] 杜策之 丁峰 胡小月 XU Dongqu;WANG Chengyong;DU Cezhi;DING Feng;HU Xiaoyue(School of Electromechanical Engineering,Guangdong University of Technology,Guangzhou 510006,China;State Key Laboratory for High Performance Tools,Guangdong University of Technology,Guangzhou 510006,China)
机构地区:[1]广东工业大学机电工程学院,广州510006 [2]广东工业大学,高性能工具全国重点实验室,广州510006
出 处:《金刚石与磨料磨具工程》2024年第4期508-517,共10页Diamond & Abrasives Engineering
基 金:广东省重点领域研发计划项目(2020B090924005)。
摘 要:硬脆材料超快激光加工可有效抑制加工损伤,是碳化硅陶瓷精密加工的重要手段。采用飞秒激光,在不同能量密度和脉冲数下对碳化硅陶瓷进行加工,探究激光参数对其表面形貌特征、化学组分和微孔加工的影响,分析表面微观结构的演变规律和材料去除过程。结果表明:单脉冲加工碳化硅陶瓷表面形成沸腾区和熔化区,计算得到形成特征区的阈值能量分别为3.779、0.860 J/cm^(2);碳化硅陶瓷的去除过程是光热作用和光化学作用先后作用的结果,在温度较高的中心区域的作用机制是材料的蒸发作用,其他低温区域则是材料的热分解和氧化;微孔直径和烧蚀深度随着能量密度和脉冲数量的增大而增大。本研究从材料物理化学特性变化角度进一步完善了碳化硅陶瓷飞秒激光加工机理,为碳化硅陶瓷零部件的精密无损伤加工应用提供理论参考。Objectives:Silicon carbide ceramics,as a typical hard and brittle material,are difficult to process,with challenges such as low efficiency,significant tool wear,and poor surface quality during processing.Ultrafast laser pro-cessing can effectively inhibit the processing damage,which is an important method for the precision processing of sil-icon carbide ceramics.However,existing research on femtosecond laser processing of silicon carbide primarily focuses on the laser ablation characteristics of the material.The specific removal process of the material,in relation to the com-position distribution and laser ablation mechanism,is still lacking in the relevant research.This paper analyzes the mi-crostructure of the surface of silicon carbide ceramics processed by femtosecond laser pulses and its evolution law.It re-veals the material removal process by examining the changes in chemical components in the ablation area,further im-proving the femtosecond laser processing mechanism of silicon carbide ceramics from the perspective of changes in ma-terial's physicochemical properties.Methods:Under the premise of a fixed laser repetition frequency,the silicon carbide ceramics were processed by varying the laser energy density and the number of pulses.The changes in the physical and chemical properties of silicon carbide were observed and analyzed.A field emission scanning electron microscope was used to observe the microscopic morphology of the processed surface,while a matching energy spectrum analyzer was used to analyze the composition of the processed area.Additionally,X-ray photoelectron spectroscopy was employed to detect the chemical components of the surface before and after processing.A field emission transmission electron micro-scope was used to detect the cross-sectional morphology of the microstructure.An OLS4100 confocal laser microscope was used to scan the three-dimensional morphology of the micropores formed by the pulsed processing,measuring the diameter and depth of the micropores.The diameter and depth o
分 类 号:TN249[电子电信—物理电子学] TG74[金属学及工艺—刀具与模具]
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