Differences in MBUs Induced by High-energy and Medium-energy Heavy Ions in 28 nm FPGAs  

重离子在28 nm SRAM型FPGA中引起的MCU:翻转比例,分类和形状

作　　者：Gao Shuai Ye Bing Liu Jie Xiao Guoqing 高帅

机构地区：[1]不详

出　　处：《IMP & HIRFL Annual Report》2022年第1期121-122,共2页中国科学院近代物理研究所和兰州重离子研究装置年报（英文版）

基　　金：National Natural Science Foundation of China(12035019,11690041)。

摘　　要：The high performance and exible con guration ability of static random-access memory(SRAM)-based eldprogrammable gate arrays(FPGAs)make them widely used in space missions^([1]).However,they are sensitive to single event upsets(SEUs)caused by heavy ion incidence^([2]).Moreover,as the feature size continues to shrink,the reduction of critical charges and the enhanced ment of charge sharing effects in FPGA lead to multiple-bit upsets(MBUs)occurring more frequently^([3]).

关 键 词：CONTINUE ENERGY FPGAS 

分 类 号：O571.6[理学—粒子物理与原子核物理]