Heavy Ion-induced MCUs in 28 nm SRAM-based FPGAs:Upset Proportions,Classi cations,and Pattern Shapes  

高能和中能重离子在28 nm FPGA中引起的MBU差异

作　　者：Gao Shuai Liu Jie Xiao Guoqing 高帅

机构地区：[1]不详

出　　处：《IMP & HIRFL Annual Report》2022年第1期123-124,共2页中国科学院近代物理研究所和兰州重离子研究装置年报（英文版）

基　　金：National Natural Science Foundation of China(12035019,11690041)。

摘　　要：Static random-access memory(SRAM)-based eld programmable gate arrays(FPGAs)are sensitive to radiationinduced single event upsets(SEUs)^([1]).Single-bit upsets(SBUs),as a well-known effect in FPGAs,occur when the energy deposited by a single particle(such as heavy ion)exceeds the critical charge in single memory cell.However,in modern advanced process technologies,owing to the smaller area and decreased critical charge of transistors.

关 键 词：MCU SRAM FPGAS 

分 类 号：O571.6[理学—粒子物理与原子核物理]