硼酸表面处理对ZnxMg_(1-x)O量子点自驱动光电探测器性能的影响  

Performance Enhancement of High-speed Self-driving Photodetectors Based on ZnxMg_(1-x)O Quantum Dots by Boric Acid Solution Treatment

作　　者：何玥仪 宋玺尧 王浩然 胡均义 刘少尧 周芩安 成明 范翊[1] 王云鹏[1] 王飞[1] 赵东旭[1,3] HE Yueyi;SONG Xiyao;WANG Haoran;HU Junyi;LIU Shaoyao;ZHOU Qinan;CHENG Ming;FAN Yi;WANG Yunpeng;WANG Fei;ZHAO Dongxu(State Key Laboratory of Luminescence and Applications,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130033,China;University of Chinese Academy of Sciences,Beijing 100049,China;Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology,School of Physics and Optoelectronic Engineering,Foshan University,Foshan 528231,China)

机构地区：[1]中国科学院长春光学精密机械与物理研究所发光学及应用国家重点实验室,吉林长春130033 [2]中国科学院大学,北京100049 [3]佛山大学物理与光电工程学院粤港澳智能微纳光电技术联合实验室,广东佛山528231

出　　处：《发光学报》2024年第9期1521-1530,共10页Chinese Journal of Luminescence

基　　金：国家重点研发计划(2022YFE0202300);中国科学院青年创新促进会(2022220);吉林省科技发展计划(20210201087GX)。

摘　　要：氧化锌材料(ZnO)因其独特的物理和化学性质在自驱动光电探测领域中展现出巨大应用潜力。然而,目前基于ZnO材料的自驱动光电探测器存在结构复杂、响应时间长、响应度低等问题,难以满足实际应用需求。本文构建了一种结构简单、响应速度快的ITO/ZnO量子点(QDs)/Au光电探测器,并提出了一种硼酸(BA)表面处理结合退火的处理工艺,成功降低了ZnO QDs薄膜中的表面态密度,提高了器件光电性能。器件在0 V下响应时间约为1 ms,开/关比达到104,响应度达到8.81 mA/W。将这一工艺应用在Mg2+掺杂ZnO量子点基光电探测器中,同样提高了器件的比探测率和响应度,获得了具有0.93 ms上升时间的高响应速度自驱动光电探测器,Mg2+掺杂量越高,器件的上升时间越短。这项工作证实了BA表面处理结合退火处理工艺对化学合成的ZnO材料性能具有普遍提升作用,有望广泛应用于ZnO基紫外光电探测器的性能优化中。Zinc oxide nanomaterials(ZnO)hold tremendous potential in the field of self-powered photodetection due to their unique physical and chemical properties.However,self-powered photodetectors based on ZnO nanomate-rials currently face challenges such as complex structures,slow response speed,low responsivity and detectivity etc.,making it difficult to meet practical application requirements.In this study,simple structured ITO/ZnO quan-tum dots(QDs)/Au photodetectors with fast response speed were fabricated.A surface treatment process combining boric acid(BA)surface treatment with annealing was carried out,which successfully reduced the surface state densi-ty in ZnO quantum dot films and increased the device’s detectivity by approximately an order of magnitude.The rise and fall time of the device at 0 V were 1.29 ms and 1.31 ms,respectively,achieving an on/off ratio of 10⁴and a re-sponsivity as high as 8.81 mA/W.Applying this process to bandgap-tunable Mg²⁺-doped quantum dot-based photode-tectors similarly improved the detectivity and responsivity of the devices.A high-response-speed self-powered photo-detector with a rise time of 0.93 ms was obtained,and as the Mg doping concentration increased,the rise time of the device decreased.This work demonstrates that the combined BA surface treatment with annealing process significant-ly enhances the performance of chemically synthesized ZnO materials,with potential widespread application in per-formance optimization of photodetectors based on ZnO nanomaterials.

关 键 词：氧化锌量子点 自驱动光电探测器 溶液表面处理 带隙调控 

分 类 号：TN23[电子电信—物理电子学] O482.31[理学—固体物理]