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作 者:王如志[1,2] 张京阳 杨孟骐 王佳兴 郑坤[1,3] WANG Ruzhi;ZHANG Jingyang;YANG Mengqi;WANG Jiaxing;ZHENG Kun(Faculty of Materials and Manufacturing,Beijing University of Technology,Beijing 100124,China;Key Laboratory of Adranced Functional Materials,Ministry of Education,Beijing 100124,China;Beijing Key Laboratory of Microstructure and Property of Solids,Beijing 100124,China)
机构地区:[1]北京工业大学材料与制造学部,北京100124 [2]新型功能材料教育部重点实验室,北京100124 [3]固体微结构与性能北京市重点实验室,北京100124
出 处:《北京工业大学学报》2024年第9期1038-1048,共11页Journal of Beijing University of Technology
基 金:国家自然科学基金资助项目(11774017)。
摘 要:旨在探究非贵金属Cu替代贵金属Au作为催化剂在柔性碳膜上制备高结晶的GaN纳米线的可行性,并研究其场发射特性及机理。采用非贵金属Cu替代贵金属Au作为催化剂,在柔性碳膜上制备了直径为20~100 nm、长度为3~15μm的高结晶的GaN纳米线,并通过工艺参数对其结构与尺寸进行调控,得到GaN纳米线薄膜的催化生长机制。通过对其场发射特性进行研究,发现其场发射性能与其纳米结构紧密相关,催化剂厚度以及薄膜弯曲状态可显著影响其场发射性能。结果表明,采用Cu作为催化剂所制备的GaN纳米线柔性薄膜的场发射电流具有较好的稳定性。该研究为GaN纳米线的低成本制备方法提供了可借鉴思路,同时也为场发射柔性器件的制作提供了可行的技术手段。The aim of this study is to investigate the feasibility of using non precious metal Cu as a catalyst instead of precious metal Au to prepare highly crystalline GaN nanowires on flexible carbon films,and to investigate their field emission characteristics and mechanisms.Non precious metal Cu instead of precious metal Au is used as a catalyst to prepare a flexible carbon film with a diameter of approximate 20-100 nm and a length of approximate 3-15μm.The catalytic growth mechanism of GaN nanowire thin films was obtained by adjusting the structure and size of high crystalline GaN nanowires with m and process parameters.By studying its field emission characteristics,it is found that its field emission performance is closely related to its nanostructure,and the thickness of the catalyst and the bending state of the thin film can significantly affect its field emission performance.The field emission current of GaN nanowire flexible films prepared using Cu as a catalyst has good stability.This study provides a reference idea for low-cost preparation methods of GaN nanowires,and also provides feasible technical means for the production of field emission flexible devices.
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