Enhancing Defect-Induced Dipole Polarization Strategy of SiC@MoO_(3)Nanocomposite Towards Electromagnetic Wave Absorption  

作　　者：Ting Wang Wenxin Zhao Yukun Miao Anguo Cui Chuanhui Gao Chang Wang Liying Yuan Zhongning Tian Alan Meng Zhenjiang Li Meng Zhang 

机构地区：[1]College of Chemical Engineering,Qingdao University of Science and Technology,Qingdao 266042,People’s Republic of China [2]College of Materials Science and Engineering,Qingdao University of Science and Technology,Qingdao 266042,People’s Republic of China [3]Shandong Engineering Laboratory for Preparation and Application of High-Performance Carbon-Materials,College of Electromechanical Engineering,Qingdao University of Science and Technology,Qingdao 266061,People’s Republic of China [4]Key Laboratory of Optic-Electric Sensing and Analytical Chemistry for Life Science,MOE,Shandong Key Laboratory of Biochemical Analysis,College of Chemistry and Molecular Engineering,Qingdao University of Science and Technology,Qingdao 266042,People’s Republic of China

出　　处：《Nano-Micro Letters》2024年第12期406-426,共21页纳微快报（英文版）

基　　金：supported by the National Natural Science Foundation of China under Grant Nos. 52072196, 52002200, 52102106, 52202262, 22379081, 22379080;Major Basic Research Program of Natural Science Foundation of Shandong Province under Grant No. ZR2020ZD09;the Natural Science Foundation of Shandong Province under Grant Nos. ZR2020QE063, ZR2022ME090, ZR2023QE059. Moreover;supported by the Visiting Scholar Fellowship Funding for Teachers in Shandong Province’s General Undergraduate Institutions

摘　　要：Defect engineering in transition metal oxides semiconductors(TMOs)is attracting considerable interest due to its potential to enhance conductivity by intentionally introducing defects that modulate the electronic structures of the materials.However,achieving a comprehensive understanding of the relationship between micro-structures and electromagnetic wave absorption capabilities remains elusive,posing a substantial challenge to the advancement of TMOs absorbers.The current research describes a process for the deposition of a MoO_(3)layer onto SiC nanowires,achieved via electro-deposition followed by high-temperature calcination.Subsequently,intentional creation of oxygen vacancies within the MoO_(3)layer was carried out,facilitating the precise adjustment of electromagnetic properties to enhance the microwave absorption performance of the material.Remarkably,the SiC@MO-t4 sample exhibited an excellent minimum reflection loss of-50.49 dB at a matching thickness of 1.27 mm.Furthermore,the SiC@MO-t6 sample exhibited an effective absorption bandwidth of 8.72 GHz with a thickness of 2.81 mm,comprehensively covering the entire Ku band.These results not only highlight the pivotal role of defect engineering in the nuanced adjustment of electromagnetic properties but also provide valuable insight for the application of defect engineering methods in broadening the spectrum of electromagnetic wave absor ption effectiveness.SiC@MO-t samples with varying concentrations of oxygen vacancies were prepared through in-situ etching of the SiC@MoO_(3)nanocomposite.The presence of oxygen vacancies plays a crucial role in adjusting the band gap and local electron distribution,which in turn enhances conductivity loss and induced polarization loss capacity.This finding reveals a novel strategy for improving the absorption properties of electromagnetic waves through defect engineering.

关 键 词：Defect engineering Oxygen vacancies SiC@MoO_(3)nanocomposite Electromagnetic wave absorption Induced dipole polarization 

分 类 号：TB33[一般工业技术—材料科学与工程]