A位La/Sr共掺杂PbZrO_(3)薄膜的制备及储能特性优化  

Preparation and Energy Storage Properties of A-site La/Sr Co-doped PbZrO_(3)Thin Films

作　　者：沈浩 陈倩倩[1] 周渤翔 唐晓东[1] 张媛媛[1,2] SHEN Hao;CHEN Qianqian;ZHOU Boxiang;TANG Xiaodong;ZHANG Yuanyuan(Key Laboratory of Polar Materials and Devices,Ministry of Education,Department of Electronic Science,East China Normal University,Shanghai 200241,China;Chongqing Institute of East China Normal University,Chongqing 401120,China)

机构地区：[1]华东师范大学电子科学系,极化材料与器件教育部重点实验室,上海200241 [2]华东师范大学重庆研究院,重庆401120

出　　处：《无机材料学报》2024年第9期1022-1028,共7页Journal of Inorganic Materials

基　　金：重庆市自然科学基金(CSTB2022NSCQ-MSX1474)。

摘　　要：反铁电材料凭借超高的功率密度,在电介质能量存储领域具有极高的研究热度。锆酸铅(PbZrO_(3),PZO)是反铁电材料的典型代表,也是研究最为广泛的反铁电材料之一。如何提升PZO基材料的储能性能是目前的研究重点。本工作在La^(3+)掺杂PZO的基础上,进一步将小半径的Sr^(2+)掺入到PZO钙钛矿结构的A位,实现了PZO基反铁电薄膜储能性能的进一步提升。采用溶胶-凝胶法制备了A位La/Sr共掺杂Pb__(0.94-x)La_(0.04)Sr_(x)ZrO_(3)(Sr-PLZ-x,x=0,0.03,0.06,0.09,0.12)反铁电薄膜,系统研究了不同Sr^(2+)掺杂量对Sr-PLZ-x反铁电薄膜的晶体结构,以及铁电性能、储能性能和疲劳性能等的影响。结果表明:随着Sr^(2+)掺杂量x的增加,Sr-PLZ-x薄膜的晶格常数不断减小,薄膜的饱和极化强度先略有增加并保持,后逐渐降低。同时,Sr-PLZ-x薄膜的容忍因子逐步降低,转折电场不断增大,反铁电性逐渐增强,击穿场强有所提高,储能性能得到提高。在x=0.03时,Sr-PLZ-x反铁电薄膜的储能密度和储能效率分别达到31.7 J/cm^(3)和71%,储能性能最优。同时掺入Sr^(2+)也使得Sr-PLZ-x反铁电薄膜的疲劳性能进一步优化,其中x=0.12组分薄膜样品在经历了10^(7)次循环后,储能密度和储能效率仅有3.4%和2.7%的衰减。综上所述,A位La/Sr共掺杂可有效提高PZO基反铁电薄膜的储能性能。Antiferroelectric materials have been extensively studied in the field of dielectric energy storage due to their ultra-high power density.Lead zirconate(PbZrO_(3),PZO),as a prototype of antiferroelectric material,has been one of the most studied antiferroelectric materials,and research on enhancing energy storage performance of PZO-based materials is a hotspot of the current study.In this work,further improvement of the energy storage performance of PZO-based antiferroelectric thin films was realized by further doping small-radius Sr^(2+)into the A-site of the PZO perovskite structure on the basis of La^(3+)-doped PZO.A series of antiferroelectric thin films of A-site La/Sr co-doped Pb__(0.94-x)La_(0.04)Sr_(x)ZrO_(3)(Sr-PLZ-x,x=0,0.03,0.06,0.09,0.12)were prepared by Sol-Gel method,and the effects of Sr^(2+)doping on the crystal structure and electrical properties such as ferroelectricity,energy storage,and fatigue properties of Sr-PLZ-x antiferroelectric films were systematically investigated.The results show that with the doping of Sr^(2+),the lattice constants are gradually reduced,and the saturation polarization of the films is first slightly increased and then maintained,but finally gradually decreased.The tolerance factors of Sr-PLZ-x films are reduced with increasing Sr^(2+)doping content,while the antiferroelectricities of the films are enhanced.Both the switching field and the breakdown strength are increased,resulting in an improved energy storage performance of Sr-PLZ-x films.At x=0.03,the energy storage performance of Sr-PLZ-x antiferroelectric film reaches the highest,with the energy storage density and efficiency are 31.7 J/cm^(3)and 71%,respectively.Meanwhile,the doping of Sr^(2+)also makes the fatigue characteristics of Sr-PLZ-x antiferroelectric films further improved.The x=0.12 antiferroelectric film exhibits only 3.4%and 2.7%degradation in energy storage density and energy storage efficiency after 10^(7)cycles.In summary,the method of A-site La/Sr co-doping can effectively improve the energy sto

关 键 词：元素掺杂 锆酸铅 反铁电 储能 

分 类 号：TB34[一般工业技术—材料科学与工程]