晶圆键合加热板研制与试验研究  

Development and Experimental Research on Wafer Bonding Heating Plate

作　　者：张红梅 冯凯 ZHANG Hongmei;FENG Kai(The 2th Research Institute of CETC,Taiyuan 030024,China)

机构地区：[1]中国电子科技集团公司第二研究所,山西太原030024

出　　处：《电子工业专用设备》2024年第5期37-41,共5页Equipment for Electronic Products Manufacturing

摘　　要：晶圆键合的关键技术为键合设备的热场设计,通过使用有限元和试验相结合的方法,设计并试制了一种可用于晶圆键合的圆形加热板;通过使用加热板以及真空钎焊的方式有效提高了加热丝的热传导效果,最终实现了表面温度偏差最大不超过1%的温度均匀性要求以及100 kN的承压性能。The key technology of wafer bonding is the thermal field design of the bonding equipment.In this paper,using a combination of finite element and experiment methods,a circular heating plate that can be used for wafer bonding is designed and trial-produced.The method of using uniform temperature plate and vacuum brazing effectively improves the heat conduction effect,achieving a TUS of no more than 1%and a pressure bearing performance of 100 kN.

关 键 词：晶圆键合 加热板 温度均匀性 真空钎焊 

分 类 号：TN305.94[电子电信—物理电子学]