氧化硅水平隧穿结电子源及其应用  

Silicon Oxide Horizontal Tunneling Junction Electron Source and Its Applications

作　　者：朱韬远 李志伟[1] 詹芳媛 杨威[1] 魏贤龙[1] ZHU Taoyuan;LI Zhiwei;ZHAN Fangyuan;YANG Wei;WEI Xianlong(Key Laboratory for the Physics and Chemistry of Nanodevices and School of Electronics,Peking University,Beijing 100871,China)

机构地区：[1]北京大学电子学院纳米器件物理和化学教育部重点实验室,北京100871

出　　处：《真空科学与技术学报》2024年第9期737-748,共12页Chinese Journal of Vacuum Science and Technology

基　　金：国家自然科学基金项目(62350040);国家重点研发计划项目(2019YFZ0210201)。

摘　　要：电子源是真空电子设备的核心部件,片上微型电子源是实现微型化、片上化真空电子器件的关键和基础。氧化硅水平隧穿结电子源是本课题组近几年发展的一种新型片上微型电子源,其具有发射效率高、发射电流密度大、工作电压低、能耐受粗真空和时间响应快等优点,展现出较大的应用潜力。文章将从电子发射微观过程及理论模型、阵列化集成以及在真空电子器件中的应用三个方面系统介绍氧化硅水平隧穿结电子源,并对本课题组在该方向上所做的工作进行梳理与总结。Electron source is the core component of vacuum electronic devices,and on-chip micro-electron source is the key and foundation for realizing miniaturized and on-chip vacuum electronic devices.Silicon oxide Horizontal Tunneling Junction Electron Source(HTJES)is a new type of on-chip miniature electron source developed by our group in recent years,which has the advantages of high emission efficiency,high emission current density,low operating voltage,ability to withstand rough vacuum and fast temporal response,etc.,and shows a large potential for applications.In this paper,we will systematically introduce the silicon oxide HTJES from three aspects,including micro-processes and theoretical models of electron emission,arrayed integration,and applications in vacuum electronic devices,and summarize the works done by our group in this field.

关 键 词：氧化硅水平隧穿结电子源 片上微型电子源 微型真空电子器件 

分 类 号：TN389[电子电信—物理电子学]