Atomically self-healing of structural defects in monolayer WSe_(2)  

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作  者:Kangshu Li Junxian Li Xiaocang Han Wu Zhou Xiaoxu Zhao 李康舒;李俊贤;韩小藏;周武;赵晓续(School of Materials Science and Engineering,Peking University,Beijing 100871,China;School of Physical Sciences,University of Chinese Academy of Sciences,Beijing 100049,China;AI for Science Institute,Beijing 100084,China)

机构地区:[1]School of Materials Science and Engineering,Peking University,Beijing 100871,China [2]School of Physical Sciences,University of Chinese Academy of Sciences,Beijing 100049,China [3]AI for Science Institute,Beijing 100084,China

出  处:《Chinese Physics B》2024年第9期49-55,共7页中国物理B(英文版)

基  金:the Beijing Natural Science Foundation(Grant Nos.JQ24010 and Z220020);the Fundamental Research Funds for the Central Universities,and the National Natural Science Foundation of China(Grant No.52273279);Project supported by the Electron Microscopy Laboratory of Peking University,China for the use of Nion U-HERMES200 scanning transmission electron microscopy.We thank Materials Processing and Analysis Center,Peking University,for assistance with TEM characterization.The electron microscopy work was through a user project at Center of Oak Ridge National Laboratory(ORNL)for Nanophase Materials Sciences(CNMS),which is a DOE Office of Science User Facility.

摘  要:Minimizing disorder and defects is crucial for realizing the full potential of two-dimensional transition metal dichalcogenides(TMDs) materials and improving device performance to desired properties. However, the methods in defect controlcurrently face challenges with overly large operational areas and a lack of precision in targeting specific defects. Therefore,we propose a new method for the precise and universal defect healing of TMD materials, integrating real-time imaging withscanning transmission electron microscopy (STEM). This method employs electron beam irradiation to stimulate the diffusionmigration of surface-adsorbed adatoms on TMD materials grown by low-temperature molecular beam epitaxy (MBE),and heal defects within the diffusion range. This approach covers defect repairs ranging from zero-dimensional vacancydefects to two-dimensional grain orientation alignment, demonstrating its universality in terms of the types of samples anddefects. These findings offer insights into the use of atomic-level focused electron beams at appropriate voltages in STEMfor defect healing, providing valuable experience for achieving atomic-level precise fabrication of TMD materials.

关 键 词:scanning transmission electron microscopy(STEM) atom manipulation nanoscale materials and structures:fabrication and characterization new materials:theory design FABRICATION 

分 类 号:O562[理学—原子与分子物理]

 

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