In-situ deposited anti-aging TiN capping layer for Nb superconducting quantum circuits  

作　　者：Hao-Ran Tao Lei Du Liang-Liang Guo Yong Chen Hai-Feng Zhang Xiao-Yan Yang Guo-Liang Xu Chi Zhang Zhi-Long Jia Peng Duan Guo-Ping Guo 陶浩然;杜磊;郭亮亮;陈勇;张海峰;杨小燕;徐国良;张驰;贾志龙;段鹏;郭国平(CAS Key Laboratory of Quantum Information,University of Science and Technology of China,Hefei 230026,China;CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics,University of Science and Technology of China,Hefei 230026,China;Origin Quantum Computing Company Limited,Hefei 230088,China)

机构地区：[1]CAS Key Laboratory of Quantum Information,University of Science and Technology of China,Hefei 230026,China [2]CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics,University of Science and Technology of China,Hefei 230026,China [3]Origin Quantum Computing Company Limited,Hefei 230088,China

出　　处：《Chinese Physics B》2024年第9期133-137,共5页中国物理B（英文版）

基　　金：the National Natural Science Foun-dation of China(Grant Nos.12034018 and 11625419).

摘　　要：The performance of Nb superconducting quantum devices is predominantly limited by dielectric loss at the metal–air interface,where Nb2O5 is considered the main loss source.Here,we suppress the formation of native oxides by in-situ deposition of a TiN capping layer on the Nb film.With TiN capping layers,no Nb2O5 forms on the surface of the Nb film.The quality factor Qi of the Nb resonator increases from 5.6×10^(5) to 7.9×10^(5) at low input power and from 6.8×10^(6) to 1.1×10^(7)at high input power.Furthermore,the TiN capping layer also shows good aging resistance in Nb resonator devices,with no significant performance fluctuations after one month of aging.These findings highlight the effectiveness of TiN capping layers in enhancing the performance and longevity of Nb superconducting quantum devices.

关 键 词：ANTI-AGING OXIDATION dielectric loss Nb superconducting quantum circuits 

分 类 号：O413[理学—理论物理]