Current-perpendicular-to-plane transport properties of 2D ferromagnetic material CrTe_(2)  

作　　者：Jin Wang Yu Liu Taikun Wang Yongkang Xu ShuanghaiWang Kun He Yafeng Deng Pengfei Yan Liang He 王瑾;刘宇;王太坤;徐永康;王双海;何坤;邓亚峰;闫鹏飞;何亮(School of Electronic Science and Engineering,Nanjing University,Nanjing 210023,China;State Key Laboratory of Spintronics,Nanjing University,Suzhou 215163,China)

机构地区：[1]School of Electronic Science and Engineering,Nanjing University,Nanjing 210023,China [2]State Key Laboratory of Spintronics,Nanjing University,Suzhou 215163,China

出　　处：《Chinese Physics B》2024年第9期535-539,共5页中国物理B（英文版）

基　　金：the National Natural Science Foundation of China(Grant Nos.12241403 and 61974061);the Natural Science Foundation of Jiangsu Province of China(Grant No.BK20140054).

摘　　要：Heterostructures of van der Waals(vdW)ferromagnetic materials have become a focal point in research of lowdimensional spintronic devices.The current direction in spin valves is commonly perpendicular to the plane(CPP).However,the transport properties of the CPP mode remain largely unexplored.In this work,current-in-plane(CIP)mode and CPP mode for CrTe_(2) thin films are carefully studied.The temperature-dependent longitudinal resistance transitions from metallic(CIP)to semiconductor behavior(CPP),with the electrical resistivity of CPP increased by five orders of magnitude.More importantly,the transport properties of the CPP can be categorized into a single-gap tunneling-through model with the activation energy(Ea)of1.34 meV/gap at 300–150 K,the variable range hopping model with a linear negative magnetoresistance at 150–20 K,and weak localization region with a nonlinear magnetic resistance below 20 K.This study explores the vertical transport in CrTe_(2) materials for the first time,contributing to understand its unique properties and to pave the way for its potential in spin valve devices.

关 键 词：2D vdW CrTe_(2) current-perpendicular-to-plane negative magnetic resistance 

分 类 号：O469[理学—凝聚态物理]