基于锗硅工艺0.01~2GHz低温低噪声放大器设计  

Design of cryogenic LNA at 0.01 to 2 GHz based on silicon-germanium technology

作　　者：潘北军 张诚 陆勤龙[1,2] 宾峰 Pan Bejun;Zhang Cheng;Lu Qinlong;Bin Feng(The 16th Institute of CETC,Hefei 230088,China;R&D Centre of Cryoelectronics,CETC,Hefei 230088,China)

机构地区：[1]中国电子科技集团公司第十六研究所,合肥230088 [2]中国电子科技集团公司低温电子研发中心,合肥230088

出　　处：《低温与超导》2024年第8期17-22,共6页Cryogenics and Superconductivity

基　　金：合肥国家实验室量子科技仪器专项项目(11160020230335KDD)资助。

摘　　要：低频超宽带低噪声放大器是低温超导测试系统中核心器件之一。本文采用锗硅异质结双极型晶体管,单电源两级放大电路结构,通过电阻负反馈电路设计,实现了一款频率范围为0.01~2 GHz的低温低噪声放大器,该放大器增益大于33 dB,输入输出回波损耗小于-10 dB,15 K测试环境中,平均噪声温度10 K,功耗15 mW。该放大器目前已应用于超导信号测试系统中,解决了低温超导测试中极微弱信号放大难题,提高了测试系统灵敏度和测试效率。A low-frequency and ultra-wideband low-noise amplifier(LNA)is one of the core components in low-temperature superconducting testing systems.In this study,a cryogenic LNA at O.O1 to 2 CHz was designed through the design of a resistive negative feedback circuit and was fabricated using a SiGe heterojunction bipolar transistor and a two-stage amplifier circuit with single power supply.The gain of LNA is over 33 dB,with input and output return losses being less than-10 dB.At 15 K,the average noise temperature is 10 K,the power consumption is 15 mW.The LNA was applied in low temperature superconducting testing systems with improving the sensitivity and efficiency of the system.

关 键 词：低温 低噪声放大器 超导 锗硅工艺 

分 类 号：TN722.3[电子电信—电路与系统]