Structural design of mid-infrared waveguide detectors based on InAs/GaAsSb superlattice  

基于InAs/GaAsSb超晶格的中红外波导探测器结构设计

作　　者：PEI Jin-Di CHAI Xu-Liang WANG Yu-Peng ZHOU Yi 裴金狄;柴旭良;王昱彭;周易(国科大杭州高等研究院物理与光电工程学院,浙江杭州310024;中国科学院上海技术物理研究所红外成像材料与器件重点实验室,上海200083)

机构地区：[1]School of Physics and Optoelectronic Engineering,Hangzhou Institute for Advanced Study,University of Chinese Academy of Sciences,Hangzhou 310024,China [2]Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China

出　　处：《红外与毫米波学报》2024年第4期457-463,共7页Journal of Infrared and Millimeter Waves

基　　金：Supported by the National Natural Science Foundation of China(NSFC)(61904183,61974152,62104237,62004205);the Youth Innovation Promotion Association of the Chinese Academy of Sciences(Y202057);Shanghai Science and Technology Committee Rising-Star Program(20QA1410500);Shanghai Sail Plans(21YF1455000)。

摘　　要：In the realm of near-infrared spectroscopy,the detection of molecules has been achieved using on-chip waveguides and resonators.In the mid-infrared band,the integration and sensitivity of chemical sensing chips are often constrained by the reliance on off-chip light sources and detectors.In this study,we demonstrate an InAs/GaAsSb superlattice mid-infrared waveguide integrated detector.The GaAsSb waveguide layer and the InAs/GaAsSb superlattice absorbing layer are connected through evanescent coupling,facilitating efficient and highquality detection of mid-infrared light with minimal loss.We conducted a simulation to analyze the photoelectric characteristics of the device.Additionally,we investigated the factors that affect the integration of the InAs/GaAs⁃Sb superlattice photodetector and the GaAsSb waveguide.Optimal thicknesses and lengths for the absorption lay⁃er are determined.When the absorption layer has a thickness of 0.3μm and a length of 50μm,the noise equiva⁃lent power reaches its minimum value,and the quantum efficiency can achieve a value of 68.9%.The utilization of waveguide detectors constructed with Ⅲ-Ⅴ materials offers a more convenient means of integrating mid-infra⁃red light sources and achieving photoelectric detection chips.InAs/GaAsSb超晶格;波导探测器;倏逝波耦合;GaAsSb波导中文摘要:在近红外领域,已经利用片上波导和谐振器实现了分子的光谱检测。然而在中红外波段,许多传感器仍使用芯片外光源和探测器,这限制了化学传感芯片的集成度和灵敏度。本文设计了一种InAs/GaAsSb超晶格中红外波导集成探测器,采用GaAsSb作为中红外波导,波导层和InAs/GaAsSb超晶格吸收层之间采用倏逝波耦合方式,可以实现低损耗和高响应度的中红外光探测。对器件的光电特性进行了模拟,着重分析了InAs/GaAsSb超晶格光电探测器与GaAsSb波导集成的影响因素,得到了吸收区的最优厚度和长度。当吸收区的厚度为0.3μm、长度为50μm时,噪声等效功率最低,量子效率可以达到68.9%。基于Ⅲ-Ⅴ族材料的波导探测器更容易集成中红外光源,实现中红外的片上集成光电检测芯片。

关 键 词：InAs/GaAsSb superlattice waveguide detector evanescent coupling GaAsSb waveguide 

分 类 号：TN304.2[电子电信—物理电子学] TN305