宽波段响应硅雪崩光电探测器研究  

Research on silicon avalanche photodetector with wideband response

作　　者：彭红玲[1] 卫家奇 宋春旭 王天财 曹澎 陈剑 邓杰[3] ZHUANG Qian-Dong 郑婉华[1] PENG Hong-Ling;WEI Jia-Qi;SONG Chun-Xu;WANG Tian-Cai;CAO Peng;CHEN Jian;DENG Jie;ZHUANG Qian-Dong;ZHENG Wan-Hua(Laboratory of Solid State Optoelectronics Information Technology,Institute of Semiconductors,CAS,Beijing 100083,China;College of Electronic and Communication Engineering,University of Chinese Academy of Sciences,Beijing 101408,China;Southwest Institute of Technical Physics,Chengdu 610041,China;Physics Department,Lancaster University,Lancaster LA14YB,U.K.)

机构地区：[1]中国科学院半导体研究所固态光电信息技术实验室,北京100083 [2]中国科学院大学电子与通信工程学院,北京101408 [3]西南技术物理研究所,四川成都610041 [4]Physics Department,Lancaster University,Lancaster LA14YB,U.K.

出　　处：《红外与毫米波学报》2024年第4期464-471,共8页Journal of Infrared and Millimeter Waves

基　　金：国家重点研发计划(2018YFE0200900)。

摘　　要：本文基于目前对宽波段探测器的应用需求,设计了一种在250~1100 nm范围有较高响应的硅雪崩光电探测器(Si APD),不需要拼接即可实现紫外-可见-近红外波段光的高效探测。分别对硅的紫外增强和(近)红外增强进行了分析,在此基础上,为获得宽波段响应Si APD,对器件结构进行模拟设计,采用光背入射等方式,提高短波吸收,同时保证近红外吸收。模拟优化的Si APD器件峰值波长940 nm左右,在250 nm和1100 nm处响应光电流均超过峰值的15%,这种结构的器件适用于多光谱及未来高精度探测等应用领域。Based on the current application requirements for wideband response photodetectors,we designed a novel silicon avalanche photodetector(Si APD)with high response in a broad spectral range of 250-1100 nm and it could achieve efficient detection of ultraviolet,visible and near-infrared light without splicing.The enhancement of silicon on ultraviolet and infrared bands was separately analyzed.This was followed by simulation on the device structure designs using different methods such as back incidence,to improve short wavelength absorption while maintaining a high infrared absorption.The Si APD shows a peak wavelength at around 940 nm and a high photoresponse at 250 nm and 1100 nm which exceeds 15%of the peak responsivity.This type of device is suitable for multispectral applications and future high-precision detection.

关 键 词：硅雪崩光电探测器 宽波段响应探测器 紫外增强 近红外增强 

分 类 号：TN215[电子电信—物理电子学] TN23