Characteristic analysis of 1.06μm long-cavity diode lasers based on asymmetric waveguide structures  

基于非对称波导结构的1.06μm长腔半导体激光器特性分析

作　　者：ZHAO Ren-Ze GAO Xin FU Ding-Yang ZHANG Yue SU Peng BO Bao-Xue 赵仁泽;高欣;伏丁阳;张悦;苏鹏;薄报学(长春理工大学高功率半导体激光国家重点实验室,吉林长春130022)

机构地区：[1]National Key Lab of High Power Semiconductor Lasers,Changchun University of Science and Technology,Changchun 130022,China

出　　处：《红外与毫米波学报》2024年第4期557-562,共6页Journal of Infrared and Millimeter Waves

基　　金：Supported by National Key R&D Project(2017YFB0405100);National Natural Science Foundation of China(61774024/61964007);Jilin province science and technology development plan(20190302007GX)。

摘　　要：In long-cavity edge-emitting diode lasers,longitudinal spatial hole burning(LSHB),two-photon ab⁃sorption(TPA)and free carrier absorption(FCA)are among the key factors that affect the linear increase in out⁃put power at high injection currents.In this paper,a simplified numerical analysis model is proposed for 1.06μm long-cavity diode lasers by combining TPA and FCA losses with one-dimensional(1D)rate equations.The ef⁃fects of LSHB,TPA and FCA on the output characteristics are systematically analyzed,and it is proposed that ad⁃justing the front facet reflectivity and the position of the quantum well(QW)in the waveguide layer can improve the front facet output power.在长腔边发射二极管激光器中,纵向空间烧孔(LSHB)、双光子吸收(TPA)和自由载流子吸收(FCA)是影响高注入电流下输出功率线性增长的关键因素。针对1.06μm长腔半导体激光器,通过将TPA和FCA损耗与一维速率方程相结合,提出一种简化数值分析模型。系统分析了LSHB、TPA和FCA对输出特性的影响,并提出可以通过调整前腔面反射率和量子阱(QW)在波导层中的位置来提高前腔面输出功率。

关 键 词：diode lasers longitudinal spatial hole burning free carrier absorption two-photon absorption 

分 类 号：TN248.4[电子电信—物理电子学]