Effect of internal structure of a batch-processing wet-etch reactor on fluid flow and heat transfer  

作　　者：Qinghang Deng Junqi Weng Lei Zhou Guanghua Ye Xinggui Zhou 

机构地区：[1]State Key Laboratory of Chemical Engineering,School of Chemical Engineering,East China University of Science and Technology,Shanghai 200237,China

出　　处：《Chinese Journal of Chemical Engineering》2024年第8期177-186,共10页中国化学工程学报（英文版）

基　　金：financially supported by the National Natural Science Foundation of China(22378115 and 22078090);the Shanghai Rising-Star Program(21QA1402000);the Natural Science Foundation of Shanghai(21ZR1418100);the Fundamental Research Funds for the Central Universities(JKA01231803)。

摘　　要：Batch-processing wet-etch reactors are the key equipment widely used in chip fabrication,and their performance is largely affected by the internal structure.This work develops a three-dimensional computational fluid dynamics(CFD)model considering heat generation of wet-etching reactions to investigate the fluid flow and heat transfer in the wet-etch reactor.The backflow is observed below and above the wafer region,as the flow resistance in this region is high.The temperature on the upper part of a wafer is higher due to the accumulation of reaction heat,and the average temperature of the side wafer is highest as its convective heat transfer is weakest.Narrowing the gap between wafer and reactor wall can force the etchant to flow in the wafer region and then facilitate the convective heat transfer,leading to better within-wafer and wafer-to-wafer etch uniformities.An inlet angle of 60°balances fluid by-pass and mechanical energy loss,and it yields the best temperature and etch uniformities.The batch with 25wafers has much wider flow channels and much lower flow resistance compared with that with 50wafers,and thus it shows better temperature and etch uniformities.These results and the CFD model should serve to guide the optimal design of batch-processing wet-etch reactors.

关 键 词：Wet-etch reactor Batch-processing Computational fluid dynamics Reaction heat Internal structure Etch uniformity 

分 类 号：TN405[电子电信—微电子学与固体电子学]