高能N等离子源辅助GaN薄膜生长及其物性研究  

Studies on the growth and physical properties of GaN thin films assisted by high-energy Nplasma sources

作　　者：胡海争 贺怀乐 赖黎 王顺利 吴超 郭道友 HU Haizheng;HE Huaile;LAI Li;WANG Shunli;WU Chao;GUO Daoyou(School of Science,Zhejiang Sci Tech University,Hangzhou,Zhejiang 310018,China)

机构地区：[1]浙江理工大学理学院,浙江杭州310018

出　　处：《光电子．激光》2024年第9期987-992,共6页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金(62274148);浙江省教育厅一般项目(23060158-F)资助项目。

摘　　要：氮化镓(GaN)具有宽带隙、高量子效率、优异的热稳定和抗辐射等特性,在高频、高功率电子及紫外光电器件中有着重要的作用。在本工作中,采用经济、环保的等离子增强化学气相沉积(plasma-enhanced chemical vapor deposition,PECVD)方法,通过使用高能N等离子体作为N源,在较低温度(850℃)下成功制备了高结晶质量的GaN薄膜,并研究了N_(2)流量对薄膜结晶质量、生长速率和光学性能的影响。结果表明,随着N_(2)流量的增加,反应原子的动能提高,薄膜生长速度和结晶质量得以提升。但随着N_(2)流量进一步增加,过高的成核率会导致衬底吸附的原子无法迁移到适当的位置,薄膜沿着不同的方向上随机生长,晶体质量下降。本文制备的GaN薄膜的载流子浓度达到2.19×10^(18)cm^(-3),迁移率达到5.17cm^(2)·V^(-1)·s^(-1),在光电子器件中展现出较强的应用潜力。GaN with a wide band gap,high quantum efficiency,excellent thermal stability,and radiation resistance is important role in high frequency,high power electronics,and UV photoelectron devices.In this study,we present a novel approach by utilizing high-energy Nplasma as the Nsource for synthesizing the GaN films with higher crystalline quality.This process occurs at a relatively low temperature of 850°C,utilizing the economical and eco-friendly plasma-enhanced chemical vapor deposition(PECVD)method.Furthermore,the effects of N_(2)flux on the crystalline quality of the films,growth rate and optical characteristics are investigated.The results reveal that an increase in N_(2)flux enhances both the film growth rate and crystalline quality by boosting the kinetic energy of reacting atoms.Nevertheless,a further increase in N_(2)flux results in excessive nucleation rate,preventing atoms adsorbed on the substrate from migrating to appropriate positions.Consequently,the films grow in random directions,leading to a decline in crystalline quality.The GaN films prepared in this study achieve a carrier concentration of 2.19×10^(18)cm^(-3)and mobility of 5.17 cm^(2)·V^(-1)·s^(-1),demonstrating significant potential for optoelectronic device applications.

关 键 词：等离子增强化学气相沉积(PECVD) GAN薄膜 低温沉积 N等离子体 

分 类 号：O472[理学—半导体物理]