Electrical and nonlinear optical properties of TGZO transparent conducting films deposited by magnetron sputtering  

磁控溅射制备TGZO透明导电薄膜的电学和非线性光学性能研究

作　　者：ZHONG Zhiyou FENG Chaode GU Jinhua LONG Hao YANG Chunyong 钟志有;冯朝德;顾锦华;龙浩;杨春勇(中南民族大学电子信息工程学院,武汉430074;中南民族大学智能无线通信湖北省重点实验室,武汉430074;中南民族大学实验教学与工程训练中心,武汉430074)

机构地区：[1]South-Central Minzu University,College of Electronics and Information Engineering,Experimental Teaching and Engineering Training Center,Wuhan 430074,China [2]South-Central Minzu University,Hubei Key Laboratory of Intelligent Wireless Communications,Experimental Teaching and Engineering Training Center,Wuhan 430074,China [3]South-Central Minzu University,Experimental Teaching and Engineering Training Center,Wuhan 430074,China

出　　处：《中南民族大学学报（自然科学版）》2024年第6期827-834,共8页Journal of South-Central Minzu University(Natural Science Edition)

基　　金：国家自然科学基金资助项目(12075322)。

摘　　要：Thin transparent oxide conducting films(TCOFs)of titanium and gallium substituted zinc oxide(TGZO)were fabricated via radio frequency(RF)magnetron sputtering technique.The effects of RF power on electrical,linear and nonlinear optical characteristics were investigated by Hall tester,Ultraviolet(UV)-visible spectrophotometer and optical characterization method.The results indicate that RF power significantly influences the electrical and optical properties of the deposited films.As RF power raises,the resistivity and Urbach energy fall initially and then rise,while the figure of merit,mean visible transmittance and optical bandgap show the reverse variation trend.At RF power of 190 W,the TGZO sample exhibits the highest electro-optical properties,with the maximum figure of merit(1.14×10^(4)Ω^(-1)∙cm^(-1)),mean visible transmittance(86.9%)and optical bandgap(3.50 eV),the minimum resistivity(6.26×10^(-4)Ω∙cm)and Urbach energy(174.23 meV).In addition,the optical constants of the deposited films were determined by the optical spectrum fitting method,and the RF power dependence of nonlinear optical properties was studied.It is observed that all the thin films exhibit normal dispersion characteristics in the visible region,and the nonlinear optical parameters are greatly affected by the RF power in the ultraviolet region.采用射频磁控溅射工艺制备了钛镓锌氧化物(TGZO)透明导电薄膜,通过霍尔测试仪、紫外-可见分光光度计和光学表征技术研究了射频功率对薄膜的电学、线性和非线性光学性能的影响.结果表明,射频功率明显影响薄膜的电学和光学性能.射频功率增加时,薄膜的电阻率和Urbach能量先减小后增大,而品质因数、平均可见光透过率和光学能隙则呈现出相反的变化趋势.当射频功率为190 W时,TGZO薄膜具有较好的光电性能,其品质因数、平均可见光透过率和光学能隙为最大值,分别为1.14×10^(4)Ω^(-1)∙cm^(-1)、86.9%和3.50 eV;对应的电阻率和Urbach能量为最小值,分别为6.26×10^(-4)Ω∙cm和174.23 meV.另外,采用光谱拟合法获得了TGZO薄膜的光学常数,研究了薄膜非线性光学性质与射频功率之间的依赖关系.结果显示,所有薄膜在可见光区域均表现为正常色散特性,并且薄膜的非线性参数在紫外区域明显受到射频功率的影响.

关 键 词：doped ZnO thin films electro-optical performance nonlinear optical properties 

分 类 号：TM914[电气工程—电力电子与电力传动]